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Groove type MOSFET device and preparation method thereof

A trench type, trench technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as slow switching response, and achieve the effect of reducing connection paths, reducing resistance, and improving switching response.

Active Publication Date: 2021-07-20
清纯半导体(宁波)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For this reason, what the present invention intends to solve is the defect that the switching response of the existing trench type MOSFET device is slow, and then a kind of trench type MOSFET device and its preparation method are provided

Method used

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  • Groove type MOSFET device and preparation method thereof
  • Groove type MOSFET device and preparation method thereof
  • Groove type MOSFET device and preparation method thereof

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preparation example Construction

[0071] In addition, the present invention also provides a method for preparing a trench type MOSFET device, such as image 3 shown, including the following steps:

[0072] providing a first conductivity type semiconductor layer, and forming a second conductivity type well region having a second conductivity type in the first conductivity type semiconductor layer;

[0073] A trench is formed in the semiconductor layer of the first conductivity type, and a dopant of the second conductivity type is injected into the semiconductor layer of the first conductivity type corresponding to the groove bottom of the trench to form a dopant of the second conductivity type in the semiconductor layer of the first conductivity type. An electric field protection portion is formed in the semiconductor layer;

[0074] sequentially forming a gate oxide layer, a gate, and an insulating layer in the trench, the gate oxide layer at least partially overlapping the second conductivity type well regio...

Embodiment approach

[0076] In one implementation manner, the step of forming a second conductivity type well region having a second conductivity type in the first conductivity type semiconductor layer includes:

[0077] Implanting dopants with the second conductivity type into the semiconductor layer of the first conductivity type to form a semiconductor layer of the second conductivity type, and heavily doping the semiconductor layer with the first conductivity type at intervals agent and a dopant of the second conductivity type to form an ohmic contact region to form a well region of the second conductivity type.

[0078] In another embodiment, a second conductivity type semiconductor layer is first formed on the first conductivity type semiconductor layer, and the second conductivity type semiconductor layer is heavily doped with a dopant of the first conductivity type and a dopant of the second conductivity type at intervals. The dopant of the second conductivity type is used to form an ohmic...

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Abstract

The invention provides a groove type MOSFET device and a preparation method thereof. According to the groove type MOSFET device, the metal connecting part is arranged in the groove and located on the insulating layer, and the metal connecting part penetrates through the insulating layer at the bottom of the groove, a grid electrode and a gate oxide layer, so that an electric field protection part can be directly connected with the source electrode through the metal connecting part, namely, the electric field protection part is connected with the source electrode in a metal interconnection mode. The arrangement can greatly reduce the connection path, reduce the resistance, and finally improve the switching response of the device.

Description

technical field [0001] The present invention relates to semiconductor devices, and more particularly to trench MOSFET devices and methods of making the same. Background technique [0002] A metal-oxide-semiconductor field-effect transistor ("MOSFET") is a common semiconductor device, which is a well-known type of semiconductor transistor that can be used as a switching device in high-level applications. A MOSFET can be turned on or off by applying a gate bias voltage to the gate electrode of the device. When a MOSFET is turned on (ie it is in its "on state"), current is conducted through the MOSFET's channel. When the bias voltage is removed from the gate electrode (or the bias voltage is lowered below a threshold level), current ceases to conduct through the channel. For example, an n-type MOSFET turns on when a gate bias sufficient to form a conductive n-type inversion layer in the p-type channel region of the device is applied. The n-type inversion layer is electricall...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336
CPCH01L29/78H01L29/66477
Inventor 不公告发明人
Owner 清纯半导体(宁波)有限公司
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