Groove type MOSFET device and preparation method thereof

A trench type, trench technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as slow switching response, and achieve the effect of reducing connection paths, reducing resistance, and improving switching response.
CN113140632AActive Publication Date: 2021-07-20清纯半导体(宁波)有限公司
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
清纯半导体(宁波)有限公司
Publication Date
2021-07-20

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Abstract

The invention provides a groove type MOSFET device and a preparation method thereof. According to the groove type MOSFET device, the metal connecting part is arranged in the groove and located on the insulating layer, and the metal connecting part penetrates through the insulating layer at the bottom of the groove, a grid electrode and a gate oxide layer, so that an electric field protection part can be directly connected with the source electrode through the metal connecting part, namely, the electric field protection part is connected with the source electrode in a metal interconnection mode. The arrangement can greatly reduce the connection path, reduce the resistance, and finally improve the switching response of the device.
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Description

technical field

[0001] The present invention relates to semiconductor devices, and more particularly to trench MOSFET devices and methods of making the same. Background technique

[0002] A metal-oxide-semiconductor field-effect transistor ("MOSFET") is a common semiconductor device, which is a well-known type of semiconductor transistor that can be used as a switching device in high-level applications. A MOSFET can be turned on or off by applying a gate bias voltage to the gate electrode of the device. When a MOSFET is turned on (ie it is in its "on state"), current is conducted through the MOSFET's channel. When the bias voltage is removed from the gate electrode (or the bias voltage is lowered below a threshold level), current ceases to conduct through the channel. For example, an n-type MOSFET turns on when a gate bias sufficient to form a conductive n-type inversion layer in the p-type channel region of the device is applied. The n-type inversion layer is electricall...

Claims

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