Heterojunction bipolar transistor
A heterojunction bipolar and transistor technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems that the knee voltage cannot be lowered, HBT efficiency, high-frequency characteristics cannot be improved, and the maximum speed is limited. Achieve the effect of linearity or robustness improvement, operation performance improvement and time shortening
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no. 1 example
[0036] refer to figure 1 , HBT includes substrate (Substrate) 10, n-type sub-collector layer (Sub Collector Layer) 20, n-type collector layer (Collector Layer) 30, p-type base layer (Base Layer) 40, n-type emitter Pole layer (Emitter Layer) 50 , Emitter Cap Layer (Emitter Cap Layer) 60 and Ohmic Contact Layer (Ohmic Contact Layer) 70 . The n-type sub-collector layer 20, the n-type collector layer 30, the p-type base layer 40, the emitter layer 50, and the n-type emitter layer 60 are sequentially formed on the substrate 10. contact layer 70 . Wherein, the doping concentration of the collector layer 30 is lower than that of the sub-collector layer 20 .
[0037] The collector layer 30 includes a graded energy gap layer GL with a changing energy gap. The graded energy gap layer GL is formed on part or all of the collector layer 30. For example, the graded energy gap layer GL is at least one of the collector layers 30. layer.
[0038] The material of the bandgap graded layer ma...
no. 2 example
[0043] The 899 case teaches that the energy-gap gradient collector layer must also contain a semiconductor material that will generate a peak electric field intensity (corresponding to the peak velocity) under a specific electric field strength (refer to the 899 case [0094] paragraph and claim 1), in the 899 case [0094 〕paragraph, when the semiconductor material contained in the bandgap gradient layer is AlGaAs, the peak electric field (corresponding to the peak velocity) will be provided at AlGaAs; the definition of the peak electric field (intensity) in the 899 case is: when the electron velocity has a peak velocity The electric field strength (refer to the 899 case Figure 5 A and Figure 5 B). Regarding the definitions of built-in electric field strength, peak electric field strength and peak velocity, the embodiments herein refer to the definition of the 899 case. In addition, the 899 case also mentioned the effective electric field and the external electric field, etc....
no. 3 example
[0053] refer to Figure 4 , a part of the energy gap gradient layer GL is further equipped with a hole blocking layer HL, and the energy gap or the maximum energy gap of a part of the hole blocking layer HL needs to be greater than the energy gap of the base layer, so as to increase the hole barrier to block the hole , so that the compensation bias voltage and knee voltage of the HBT can be reduced, thereby improving the efficiency of the HBT or PA. In one embodiment, refer to Figure 5 , the hole blocking layer HL is arranged in the middle layer of the bandgap gradient layer (such as image 3 In the intermediate layer 301), the semiconductor layer under the hole blocking layer HL (such as image 3 The bottom layer 301) can be the first energy gap change; the semiconductor layer on the hole blocking layer HL (such as image 3 The upper layer 305) can be the second energy gap change and / or the third energy gap change.
[0054] The hole blocking layer HL may comprise a mater...
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Abstract
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