Light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The disclosure provides a light-emitting diode epitaxial wafer and a manufacturing method thereof, which belong to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer and an active layer sequentially stacked on the substrate. A plurality of alternately grown electron blocking layers and P-type layers on the source layer, each of which is an AlGaN layer, along the stacking direction of the epitaxial wafer, in each period of the electron blocking layer The Al composition decreases gradually, the thickness decreases gradually, and the doping concentration of Mg in the P-type layer increases gradually in each period. The epitaxial wafer of the light emitting diode can increase the overlapping degree of the wave function of the electron and the hole in the spatial distribution, thereby improving the internal quantum efficiency of the LED.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, LED is a new generation of light source with broad prospects, and is being rapidly and widely used in traffic lights, car interior and exterior lights, urban landscape lighting, indoor and outdoor display screens and small-pitch displays. screen and other fields. [0003] Typically, GaN-based LEDs are epitaxially grown on sapphire substrates. The traditional GaN-based LED epitaxial structure generally adopts InGaN / GaN superlattice structure as the active layer. However, there is a large lattice mismatch between the InGaN layer and the GaN layer, resu...

AI Technical Summary

Problems solved by technology

However, there is a large lattice mismatch between the InGaN layer and the GaN layer, resulting in a large compressive stress between the InGaN layer and the GaN layer

Compressive stress will generate a piezoelectric polarization electric field, which reduces the overlap of electron and hole wave functions, resulting in a decrease in internal quantum efficiency, thereby affecting LED luminous efficiency

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