Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method and device for growing cadmium zinc telluride single crystal

A growth method and a technology of a growth device, which are applied in the field of growth methods and devices of CdZnTe single crystals, can solve the problems of low yield and low growth efficiency of CdZnTe melt crystals, so as to avoid polycrystals, improve growth efficiency and Yield Effect

Pending Publication Date: 2021-07-27
合肥天曜新材料科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to provide a method and device for growing a cadmium zinc telluride single crystal to overcome the above problems or at least partially solve the above problems, so as to solve the problems of low crystal growth efficiency and low yield in the existing cadmium zinc telluride melt

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device for growing cadmium zinc telluride single crystal
  • Method and device for growing cadmium zinc telluride single crystal
  • Method and device for growing cadmium zinc telluride single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] see Figure 1-5 , a method for growing a cadmium zinc telluride single crystal provided in an embodiment of the present invention, comprising the following preparation steps:

[0033] Put the cadmium zinc telluride melt 5 into the crucible 3, put the crucible 3 into the high temperature range of the growth furnace 1, and select the growth furnace 1 suitable for the vertical gradient solidification method;

[0034] Pass the cold pole 4 through the hot pole 2, and at the same time extend the bottom of the hot pole 2 and the cold pole 4 into the crucible 3;

[0035] The thermode tube 2 is electrically connected to the external independent heater, and the cold pole 4 is electrically connected to the external independent heater. The temperature of the central region of the growth interface 7 is kept at a relatively low level through the cold pole 4. The thermode tube 2 avoids the relatively low temperature of the cold rod 4 from initiating new crystallization inside the mel...

Embodiment 2

[0039] see Figure 1-5 , a method for growing a cadmium zinc telluride single crystal provided in an embodiment of the present invention, comprising the following preparation steps:

[0040] Put the cadmium zinc telluride melt 5 into the crucible 3, put the crucible 3 into the high temperature range of the growth furnace 1, and select the growth furnace 1 suitable for the Bridgman method;

[0041] Pass the cold pole 4 through the hot pole 2, and at the same time extend the bottom of the hot pole 2 and the cold pole 4 into the crucible 3;

[0042] The thermode tube 2 is electrically connected to the inner wall of the high temperature zone of the growth furnace 1, and the cold pole 4 is electrically connected to an external independent heater, and the temperature of the central area of ​​the growth interface 7 is kept at a relatively low temperature through the cold pole 4 The level of the heat tube 2 avoids the relatively low temperature of the cold rod 4 from initiating new c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention provides a method and a device for growing a cadmium zinc telluride single crystal. The growth method comprises the following preparation steps: putting a cadmium zinc telluride melt into a crucible; and enabling the temperature of the central area of the growth interface to be at a relatively low level through a cold electrode rod, and avoiding the condition that the relative low temperature of the cold electrode rod causes new crystals in the melt through a hot electrode tube. Through relative displacement between the hot electrode tube and the cold electrode rod, and the crucible, the temperature of a growth interface and the melt side is artificially intervened, so that the central point is slightly lower, growth can be ensured to extend from the center to the periphery, and meanwhile, the area except the central point is kept higher than the central point by using the hot electrode tube to avoid nucleation and polycrystal generation at other places. The growth interface is intervened manually, growth can be guaranteed to extend from the center to the periphery, meanwhile, the area except the center point is kept higher than the center point through the hot electrode tube, and nucleation in other places is avoided to generate polycrystals.

Description

technical field [0001] The invention relates to the technical field of cadmium zinc telluride single crystal growth, in particular to a growth method and device for a cadmium zinc telluride single crystal. Background technique [0002] The first step in the semiconductor industry was the preparation of artificial crystals. After more than 100 years of research, there are various methods of growing crystals. Among them, a class of methods represented by Bridgeman method (Bridgeman method) and vertical gradient freeze method (Vertical Gradient Freeze, VGF) are widely used. This type of method puts the melt of the raw material in a controllable temperature field, and obtains the temperature conditions required for crystal growth by adjusting the temperature field itself, or making the container and the temperature field relatively move. For this kind of melt→crystal growth method, the state of the growth interface directly determines the growth progress and crystal quality du...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B29/48
CPCC30B11/00C30B11/003C30B11/006C30B29/48Y02P70/50
Inventor 庞昊谢雨凌
Owner 合肥天曜新材料科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com