Method for rapidly growing InSb single crystal

Abstract

The invention discloses a method for rapidly growing an InSb single crystal. The method comprises the steps: selecting an InSb single crystal ingot as a seeding ingot, wherein the diameter of a wide neck part at the bottom of the ingot is not less than 50mm; cutting, grinding and polishing the bottom: fixing the upper end of the seed crystal square column on a seed crystal rod, and connecting theseed crystal square column to a pulling device; immersing the wide neck part at the bottom of the crystal into the melt, slowly immersing and setting heating power after the bottom surface is in contact with the melt, starting the pulling device when the bottom surface of the crystal and the melt are completely fused, the initial pulling speed is 8-10mm/h and the heating power is reduced by 0.1-0.4%, keeping the heating power unchanged, and increasing the pulling speed to 12-15mm/h when the new crystal reaches the target size; and finishing the seeding process when the bottom surface of the crystal ingot and the melt are in a fused state. According to the method, twin crystals or polycrystals are prevented from appearing in the shouldering process of the seed crystals, large-size InSb single crystals are obtained in a short time, and the growth efficiency and the crystallization rate of the InSb single crystals are improved.

Description

technical field [0001] The present invention relates to single crystal preparation, in particular to a method for rapid growth of InSb single crystal, and in particular to selection of seeded crystal ingot, treatment of seeded crystal ingot and seeding process in rapid preparation of InSb single crystal. Background technique [0002] In the process of growing InSb (indium antimonide) crystal by the Czochralski method, the InSb raw material is firstly heated and melted in a crucible. The InSb seed crystal fixed on the seed rod is slowly immersed into the melt from the surface of the melt, the bottom of the dipped seed crystal is fused with the melt, the seed rod is slowly pulled upwards, and the heat is dissipated through the seed rod. The melt in contact with the seed crystal first obtains a certain degree of supercooling, and crystallization occurs. The seed crystal rod is continuously pulled to make the crystallization process continue, thereby realizing continuous InSb c...

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Problems solved by technology

In addition, for the material InSb, its own thermal conductivity is low, only 17W / mK, and it is difficult to escape the latent heat of crystallization during the growth process. It is very easy to form local stress inside the crystal and generate dislocations, thereby reducing the quality of the crystal. So, this is the second reason for the small angled shoulders and slow growth

In order to obtain a large-sized crystal ingot, a longer shouldering time is required, and the production efficiency of single crystal growth is lower; secondly, due to the longer shouldering time, during the slow shouldering process, due to temperature fluctuations, environmental vibrations, Factors such as impurities in the oxide layer can lead to the production probability of twin crystals, polycrystals, twin crystals, etc., that is, the rate of single crystal crystal formation is reduced to a certain extent

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