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Manufacturing method of flash memory

A technology of flash memory and manufacturing method, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems affecting the data retention capacity of flash memory, and achieve the effect of improving the data retention capacity

Pending Publication Date: 2021-07-30
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a kind of manufacturing method of flash memory, to solve the problem that affects the data retention capacity of flash memory due to peeling off of etching residue

Method used

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  • Manufacturing method of flash memory
  • Manufacturing method of flash memory
  • Manufacturing method of flash memory

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Embodiment Construction

[0047] The manufacturing method of the flash memory proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0048] Please refer to Figure 5 , which is a schematic flow chart of the manufacturing method of the flash memory provided by the present invention. Such as Figure 5 As shown, the present invention provides a kind of manufacturing method of flash memory, comprising:

[0049] Step S1: providing a semiconductor substrate, the semiconductor substrate includes a storage area, a peripheral area, and a redundant area formed between the storage area and the periph...

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Abstract

The invention provides a manufacturing method of a flash memory, which comprises the following steps of: before etching a gate stack layer, covering a redundant structure formed on a redundant region by using a graphical photoresist layer, and extending and covering a peripheral region adjacent to the redundant region, when the gate stack layer is subsequently etched, the stack etching between the redundant structure and the peripheral region is not etched, so that no etching residue exists at the edge, adjacent to the peripheral region, of the redundant region, and therefore, the etching residue can be prevented from being peeled off to the memory region, and the data retention capability of the flash memory can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method for manufacturing a flash memory. Background technique [0002] In the current semiconductor industry, memory accounts for a considerable proportion of integrated circuit products, and in particular, the development of flash memory in memory is particularly rapid. The main feature of flash memory is that it can keep stored information for a long time without power on. It has many advantages such as high integration, fast access speed and easy erasing. Therefore, it is widely used in many fields such as microcomputer and automatic control. Has been widely used. [0003] refer to Figure 1~4 , which is a structural schematic diagram formed by using an existing manufacturing method of a flash memory. The manufacturing method of flash memory comprises: step 1, such as figure 1 As shown, a semiconductor substrate 10 is provided, and a gate sta...

Claims

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Application Information

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IPC IPC(8): H01L27/11524H01L27/11529H01L27/11548
CPCH10B41/41H10B41/35H10B41/50
Inventor 陈宏王卉
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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