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Memristor for regulating and controlling conductive filament positioning based on quantum dots and preparation method thereof

A technology of conductive filaments and quantum dots, applied in the direction of electrical components, etc., to achieve the effects of convenient preparation, improved consistency, and simple structure

Active Publication Date: 2021-08-03
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both of the above two methods use active metal Ag to form conductive filaments, and use the quantum dot layer to fix the generation position of the conductive filament. Compared with not introducing the quantum dot layer, the generation position of the conductive filament is relatively fixed at the quantum Dot layer, but there is no difference in the quantum layer. Theoretically, the position of any quantum dot layer can be the generation position of the conductive filament. Considering the area of ​​the quantum dot layer, it still has great randomness

Method used

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  • Memristor for regulating and controlling conductive filament positioning based on quantum dots and preparation method thereof
  • Memristor for regulating and controlling conductive filament positioning based on quantum dots and preparation method thereof
  • Memristor for regulating and controlling conductive filament positioning based on quantum dots and preparation method thereof

Examples

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Effect test

Embodiment 1

[0043] Example 1: A memristor in which quantum dots regulate the positioning of conductive filaments and its preparation method

[0044] Such as figure 1 As shown, the memristor in which quantum dots regulate the positioning of conductive filaments in this embodiment includes a lower electrode layer, a functional layer, a quantum dot layer and an upper electrode layer stacked from bottom to top, wherein the functional layer is HfO x (x=1.1 in this embodiment), the functional layer is deposited on the surface of the lower electrode, the quantum dot layer is located above the functional layer, and the upper electrode is deposited on the quantum dot layer.

[0045] The self-assembled, pinpoint-like quantum dot layer is located above the functional layer, and the quantum dot type can be a quantum dot with a shell structure, such as CdSe@ZnS quantum dots, ZnSe@ZnS quantum dots, InP@ZnSe quantum dots, CdS@PbS quantum dots Point, or CulnS 2 @ZnS quantum dots, preferably, CdSe@ZnS q...

Embodiment 2

[0068] Example 2 is substantially similar to Example 1, the main difference being that the concentration of the quantum dot solution used is 0.067mg / mL. The corresponding AFM image of the needle-like tip of the quantum dot layer of the memristor with quantum dot-regulated conductive filament positioning is as follows: Figure 6 As shown, self-assembled, spike-like quantum dot structures can also be prepared.

Embodiment 3

[0070] Embodiment 3 is substantially similar to Embodiment 1, the main difference being that the concentration of the quantum dot solution used is 0.130 mg / mL. The corresponding AFM image of the needle-like tip of the quantum dot layer of the memristor with quantum dot-regulated conductive filament positioning is as follows: Figure 7 As shown, self-assembled, spike-like quantum dot structures can also be prepared.

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Abstract

The invention belongs to the technical field of microelectronic devices, and discloses a memristor for regulating and controlling conductive filament positioning based on quantum dots and a preparation method thereof. The memristor comprises a substrate, a lower electrode layer, a functional layer, a quantum dot layer and an upper electrode layer from bottom to top, the functional layer is made of HfOx, and x is larger than 1.0 and smaller than 1.8; the quantum dot layer is provided with needle-point-shaped structures, and the needle-point-shaped structures are distributed on the surface of the functional layer in a dispersed island shape; and the upper electrode layer is used for completely or partially covering the quantum dot layer. According to the memristor, the structure of the memristor is improved, and the pinpoint-like quantum dot peaks distributed in an island shape are arranged on the surface of the HfOx functional layer, so that formation and breakage of conductive filaments of the memristor are guided, positioning of a conductive path is achieved, the consistency of the memristor is improved, and important theoretical guidance and technical support are provided for preparation of the high-performance memristor.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically relates to a memristor based on quantum dots to control the positioning of conductive filaments and a preparation method thereof. The memristor can use quantum dots to control and realize the positioning of conductive filaments. Background technique [0002] The rise of computing-intensive and data-intensive industries puts forward higher requirements for computing performance and storage density, while the continuation of traditional Von Neumann computing architecture, DRAM and Flash storage is getting lower and lower cost-effectiveness ratio as the size shrinks . Memristors are considered to be one of the strong candidates for the next generation of new memories because of their excellent window, extremely fast switching time, theoretically highest integration, and compatibility with CMOS circuits, and the continuous resistance of memristors Adjustable, dy...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/821H10N70/883H10N70/011H10N70/061
Inventor 孙华军王涛白娜缪向水
Owner HUAZHONG UNIV OF SCI & TECH