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Micro-pressure sensor chip with stress concentration structure and preparation method thereof

A technology of micro-pressure sensor and stress concentration, which is applied in the measurement of the property force of piezoelectric resistance materials, micro-structure technology, micro-structure devices, etc., can solve the problems of linearity reduction and affect the dynamic performance of sensors, and achieve linearity improvement High degree, easy mass production, low cost effect

Active Publication Date: 2021-08-06
XI AN JIAOTONG UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The sensitivity and linearity of MEMS piezoresistive pressure sensors are the most important working indicators, but the traditional methods of reducing film thickness and increasing diaphragm size to improve sensitivity usually lead to a decrease in linearity and affect the dynamic performance of the sensor

Method used

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  • Micro-pressure sensor chip with stress concentration structure and preparation method thereof
  • Micro-pressure sensor chip with stress concentration structure and preparation method thereof
  • Micro-pressure sensor chip with stress concentration structure and preparation method thereof

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Embodiment Construction

[0058] In order to make the purpose and technical solution of the present invention clearer and easier to understand. The present invention will be further described in detail below in conjunction with the drawings and embodiments. The specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0059] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular ori...

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Abstract

The invention discloses a micro-pressure sensor chip with a stress concentration structure and a preparation method of the micro-pressure sensor chip. The micro-pressure sensor chip comprises a pressure-bearing film, a double-C-shaped groove, a silicon substrate, a piezoresistor strip, a metal lead and an anti-overload glass substrate. The back surface of the silicon substrate is subjected to deep silicon etching to form a pressure-bearing film and a peninsular and island structure, and two groups of C-shaped grooves are etched in the front surface of the silicon substrate. A stress concentration area is formed between every two corresponding C-shaped grooves, and the four piezoresistor strips are arranged on the stress concentration areas. Gaps between islands and between islands and peninsula of the back cavity of the chip can further improve the stress concentration effect at the piezoresistor strips.

Description

technical field [0001] The invention belongs to the technical field of micro-electromechanical sensors, and in particular relates to a micro-pressure sensor chip with a stress concentration structure and a preparation method thereof. Background technique [0002] With the development of MEMS technology, MEMS micro-pressure sensors have been widely used in aerospace, food industry, smart home, biomedical and other fields; with the rapid development of various fields, higher requirements have been put forward for the performance and volume of sensors. Requirements, especially in the field of biomedicine, there is an urgent need for MEMS micro-pressure sensors with stable performance, high dynamics, and high sensitivity to guarantee. [0003] According to different measurement principles, MEMS micro-pressure sensors are mainly divided into piezoresistive, piezoelectric, capacitive, and resonant. Compared with MEMS micro-pressure sensors of other principles, MEMS piezoresistive...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18G01L9/06G01L19/00B81B7/02B81C1/00
CPCG01L1/18G01L9/06G01L19/00B81B7/02B81C1/00015B81B2201/0264
Inventor 赵立波李学琛韩香广乔智霞皇咪咪李伟徐廷中杨萍高漪王鸿雁关卫军吴永顺李支康朱瑄王久洪魏于昆山涛蒋庄德
Owner XI AN JIAOTONG UNIV
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