High-transmittance and low-resistance composite ITO film
A low-resistance, film-layer technology, applied to the direction of the conductive layer on the insulating carrier, can solve the problems of poor conductivity and light transmittance of ITO films, improve oxidation resistance, improve light transmittance, and improve use The effect of longevity
Active Publication Date: 2021-08-06
江苏华微薄膜科技有限公司
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] In order to improve the defects of poor electrical conductivity and light transmittance of the ITO film with multi-layer structure design, the application provides a high light transmittance and low resistance type composite ITO film, adopting the following technical scheme:
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
preparation example 1
[0041] 85% by mass percentage of nano-Ag particles and 15% of nano-Ni particles were doped and mixed with stirring to collect a mixed noble metal doped layer target 1 .
preparation example 2
[0043] 90% by mass percentage of nano-Ag particles and 10% of nano-Ni particles were doped and mixed with stirring, and the mixed noble metal doped layer target 2 was collected.
preparation example 3
[0045] 85% by mass percentage of nano-Ag particles and 15% of nano-Ni particles were doped and mixed with stirring to collect a mixed noble metal doped layer target 3 .
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Login to view more
Abstract
The invention relates to the field of ITO films, and particularly discloses a high-transmittance and low-resistance composite ITO film. The composite ITO film comprises a noble metal doped layer and an ITO film layer which are sequentially arranged on the surface of a substrate from inside to outside, and the noble metal doped layer is prepared by doping nano noble metal particles and nano metal particles. According to the technical scheme, the ITO film layer is arranged on the surface of the noble metal doped layer, high transmittance in a visible light region is obtained through the antireflection effect of the ITO film with the high refractive index, and on the basis, the noble metal doped layer is modified, so light scattering and photon absorption of the film are reduced, and the light transmission performance of the single-layer ITO thin film layer is improved; and the high-transmittance and low-resistance composite ITO film can be used in the aspects of displays, dimming films, electromagnetic shielding, infrared heat insulation and the like, and has excellent light transmittance, conductivity and infrared heat insulation performance.
Description
technical field [0001] The application relates to the field of ITO thin films, more specifically, it relates to a composite ITO film with high light transmission and low resistance value. Background technique [0002] The ITO transparent conductive film has a high transmittance to visible light, a high reflectivity to infrared light, and a high attenuation rate to microwaves. It is these special photoelectric properties that make it widely used in products such as flat-panel displays, solar cells, heat-insulating and energy-saving glass, defrosting glass, and electromagnetic shielding films. [0003] With the continuous development of technology, the requirements for the conductivity and transmittance and reflectivity of ITO transparent conductive film are constantly increasing, so it is difficult to meet its requirements only by using a single material. At present, films with high conductivity and high transmittance and reflectivity are prepared using a multi-layer structu...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14
CPCH01B5/14
Inventor 吴健李俊
Owner 江苏华微薄膜科技有限公司
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap