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IGBT service life prediction method and system based on composite failure mode coupling

A technology of life prediction and failure mode, applied in bipolar transistor testing, single semiconductor device testing, instruments, etc., can solve the problem of not considering the impact of life, and achieve the effect of accurate life prediction

Active Publication Date: 2021-08-10
WUHAN UNIV
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  • Description
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  • Application Information

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Problems solved by technology

There are also common deficiencies in these life model studies: (1) the influence of random probability distribution on life is not considered; (2) most of them only conduct life prediction for a specific failure model of IGBT module

Method used

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  • IGBT service life prediction method and system based on composite failure mode coupling
  • IGBT service life prediction method and system based on composite failure mode coupling

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Embodiment Construction

[0042] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0043] Such as figure 1 Shown is a schematic flow chart of an IGBT life prediction method based on composite failure mode coupling provided by an embodiment of the present invention, including the following steps:

[0044] S1: Based on the failure probability distribution of the solder layer and the failure probability distribution of the bonding wire, calculate the simultaneous failure probabili...

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Abstract

The invention discloses an IGBT life prediction method and system based on composite failure mode coupling. The method comprises: firstly, calculating a simultaneous failure probability model of a bonding wire and a solder layer; then, calculating the expectation of the simultaneous failure probability model, and recording the expectation as the service life under the coupling effect; establishing a coupling function relational expression; predicting the service life of the solder layer and the service life of the bonding wire; establishing an IGBT service life prediction model without considering the coupling effect; and establishing an IGBT service life prediction model considering the coupling effect. According to the invention, more accurate life prediction can be carried out on the IGBT module under the coupling effect of the solder layer and the bonding wire.

Description

technical field [0001] The invention belongs to the technical field of IGBT life prediction, and more specifically relates to a method and system for IGBT life prediction based on composite failure mode coupling. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT), as an important power semiconductor switch in the electrical field, has been widely used in many fields including rail transit, smart grid, aerospace, electric vehicles and new energy equipment, especially in clean There are important applications in technical fields such as energy and flexible direct current transmission. Since the IGBT is a power switch controlled by voltage, the IGBT is often subjected to hundreds or even thousands of volts of voltage during operation. The high-voltage and high-power working environment not only puts forward high requirements on the insulation performance of the IGBT module package, but also often leads to a large loss of IGBT during operation. These losses...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/367G01R31/26G06F111/08G06F119/02G06F119/04G06F119/08
CPCG06F30/367G01R31/2608G06F2119/02G06F2119/04G06F2111/08G06F2119/08G01R31/2848G01R31/2642
Inventor 何怡刚李猎何鎏璐王晨苑熊元新王枭
Owner WUHAN UNIV
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