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Semiconductor structure

A semiconductor and isolation structure technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, transistors, etc., can solve problems such as area reduction and diode performance degradation, and achieve the effect of increasing on-current and improving performance

Active Publication Date: 2021-08-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] With the reduction of the feature size of semiconductor devices, the area of ​​the p-n junction interface in the diode is gradually reduced, resulting in a decrease in the performance of the diode.

Method used

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Embodiment Construction

[0017] There are many problems in the formation of semiconductor structures, such as poor performance of the semiconductor structure.

[0018] It is now combined with a method of forming a semiconductor structure, and the reason why the semiconductor structure is poor is analyzed:

[0019] figure 1 It is a structural diagram of a semiconductor structure.

[0020] Please refer to figure 1 The semiconductor structure includes: a substrate 100 having a fin 102 on which the fin portion 102 has a doped region 120 having a first doped ion in the doped region; The doping layer 110 in the fin portion 102 has a second doped ion in the doped layer 110, the second doped ion being opposite to the conductivity type of the first doped ion.

[0021] Wherein, the doping region 120 forms a PN junction with the doping layer 110, the doped region 120 and the contact surface of the doped layer 110 as a PN junction interface, the PN junction interface being perpendicular to the fin The dimension in t...

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Abstract

The invention provides a semiconductor structure comprising a substrate which comprises a diode region, the substrate in the diode region being provided with a first fin part; a first doping layer which is located in the first fin part, and is provided with first ions; and a second doping layer which is located on the surface of the first doping layer and is provided with second ions. The conduction type of the second ions is opposite to that of the first ions, and the size of the contact surface of the second doping layer and the first doping layer in the width direction of the first fin part is larger than the width of the first fin part. The substrate further comprises a second MOS tube region, and a third fin part is arranged on the substrate in the second MOS tube region. The semiconductor structure further comprises a second source-drain doping layer located in the third fin part, the second source-drain doping layer is provided with second source-drain ions, and the conduction type of the second source-drain ions is the same as that of the second ions. The top surface of the first fin part is lower than the top surface of the third fin part.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing techniques, and more particularly to a semiconductor structure. Background technique [0002] With the continuous advancement of semiconductor technology, the semiconductor device develops to high integration, high quality direction, and the feature size of the semiconductor device is reduced accordingly. The decrease in the feature size of the semiconductor device means that more semiconductor devices can be formed on the same chip. [0003] Semiconductor diodes are also known as crystalline diodes, referred to as diodes, and are commonly used in semiconductor fields. There is a PN junction inside the diode, which includes one-way conductivity in the direction of the external voltage. The PN junction in the diode is a P-N junction interface formed by a p-type semiconductor and a n-type semiconductor. A spatial charge layer is formed on both sides of its interface to form a self-const...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/423
CPCH01L29/785H01L29/42356H01L29/0657H01L21/746H01L21/823807H01L27/0727H01L27/0629H01L21/823814H01L21/823878H01L29/0688H01L29/861H01L29/66136H01L21/823821H01L27/0924H01L29/36H01L21/02532H01L21/02529H01L21/02636H01L29/167H01L29/0847H01L21/26513H01L29/165H01L29/1608
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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