Method for manufacturing gallium nitride substrate by using ion injection
A gallium nitride substrate and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high process complexity, increased production cost, high growth process complexity, and increased production cost, etc.
Pending Publication Date: 2021-08-13
IUCF HYU (IND UNIV COOP FOUND HANYANG UNIV)
View PDF13 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0009] Therefore, in the conventional technology, the high complexity of the process can lead to an increase in the production cost
[0010] In particular, it is likely to pose safety concerns due to the inclusion of very hazardous process steps such as the hydrogen heat treatment process
[0011] Also, limited implementation of vertical HVPE equipment using specially designed susceptors is likely
[0012] In other words, the manufacturing technology of the stand-alone GaN substrate of the traditional technology, due to the high complexity of the growth process and including very dangerous processes such as hydrogen heat treatment, is likely to cause safety problems and inevitably change the current situation. The structure with HVPE equipment or the manufacture of new equipment is likely to lead to an increase in production costs
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0042] The specific structural or functional illustrations of the embodiments according to the inventive concepts disclosed in this specification are only for the purpose of illustrating the embodiments of the inventive concepts, and the embodiments according to the inventive concepts can be implemented in various forms, and It is not limited to the Examples described in this specification.
[0043] Since the embodiments according to the inventive concept may have many changes and may have various forms, it is intended that the embodiments are illustrated in the drawings and described in detail in this specification. However, this is not intended to limit the embodiments according to the inventive concept to specific disclosed forms, but includes changes, equivalents or substitutions covering the spirit and technical scope of the present invention.
[0044] Terms such as first or second etc. may be used to describe various structural elements, but the above structural elements...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The present invention relates to a technique for manufacturing, through autonomous-separation, a gallium nitride substrate by using an ion injection process, and a method for manufacturing a gallium nitride substrate can comprise the steps of: forming a first gallium nitride layer on a substrate; forming a separation layer by injecting hydrogen ions into the first gallium nitride layer; grinding the edges of the substrate, the formed first gallium nitride layer, and the formed separation layer; forming a second gallium nitride layer on the first gallium nitride layer of which the edges are ground; and allowing the formed second gallium nitride layer to autonomously separate from the first gallium nitride layer of which the edges are ground.
Description
technical field [0001] The present invention relates to the technology of self-separation manufacturing gallium nitride substrate by using ion implantation process, more specifically, relates to the self-separation process by replacing the traditional hydrogen heat treatment process with hydrogen ion implantation process and edge (edge) grinding (grinding) process. A method for fabricating gallium nitride substrates. Background technique [0002] Free-standing gallium nitride (GaN) substrates can be used to manufacture high-power and high-brightness light-emitting diodes (high brightness light emitting diode, HB-LED), laser diodes (LASER diode, LD) and high-power devices (power device) substrate. [0003] In order to improve the performance of high power and high brightness light emitting diodes (high brightness light emitting diode, HB-LED), laser diode (LASER diode, LD) and high power device (power device), etc., it is necessary to have low dislocation density (dislocatio...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/324H01L21/3105H01L21/762H01L21/304
CPCH01L21/2654H01L33/0093H01L21/02005H01L21/02002H01L21/0254H01L21/02271H01L21/324H01L21/31051H01L21/76254H01L21/0262H01L21/304H01L21/02595H01L2924/1033H01L21/02013H01L21/02694H01L21/3245
Inventor 朴在勤沈泰宪沈宰亨朴振成李在彦
Owner IUCF HYU (IND UNIV COOP FOUND HANYANG UNIV)