Semiconductor laser

A technology of semiconductors and lasers, applied in the field of lasers, can solve the problems of uneven distribution of DFB light field and easy hole burning effect, and achieve the effects of suppressing space hole burning effect, reducing heating effect, and reducing current injection density

Inactive Publication Date: 2021-08-24
武汉云岭光电股份有限公司
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Problems solved by technology

In the field of photonic integration, DFB lasers are still troubled by factors such as wavelength control accuracy and single-mode yield. Usually, a phase shift grating is introduced into the DFB laser grating layer to improve single-mode yield. This will make the DFB light field distribution uneven and prone to hole burning effect

Method used

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  • Semiconductor laser
  • Semiconductor laser
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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] see figure 1 , image 3 , Figure 4 , Figure 5 as well as Figure 7 , Figure 8 , an embodiment of the present invention provides a semiconductor laser, including a substrate 1, a growth structure sequentially grown on the substrate 1, and a conductive channel formed on the growth structure, and the conductive channel is a long strip body, at least a part of the body of the strip body is a widened portion formed by expanding the two sides of the s...

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Abstract

The invention relates to the technical field of lasers, and provides a semiconductor laser. The semiconductor laser comprises a substrate, growth structures sequentially growing on the substrate, and conductive channels formed in the growth structures, wherein the conductive channels are long-strip-shaped strip bodies, at least one part of the body of the strip body is a widened part formed by outwards expanding the two side edges of the strip body, and the two side edges are the side edges of the strip body in the length direction. According to the semiconductor laser, the current injection density can be reduced by increasing the local volume of the strip body, so the heating effect is reduced, the space hole burning effect is inhibited, the stability of a device is improved, and the service life of the device is prolonged.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a semiconductor laser. Background technique [0002] Semiconductor lasers have attracted much attention due to their advantages of small size, light weight, low power consumption, good reliability, and long service life. Its reliability, and even its service life are further reduced. [0003] The ridge waveguide laser realizes the waveguide effect of the semiconductor laser by controlling the electrical injection of the ridge. In the ridge waveguide laser, the ridge is the part with the highest current density, optical energy flux density, and heat flux density. If there is a local place where the energy flux density is too high or the heat is concentrated, it is easy to cause the device to fail due to local high temperature. . [0004] Distributed feedback (DFB) semiconductor lasers have the advantages of high power, single longitudinal mode, and narrow linewidth, and are favo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042
CPCH01S5/04254H01S5/04256H01S5/0421
Inventor 李鸿建
Owner 武汉云岭光电股份有限公司
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