Phase change memory and preparation method thereof

Abstract

The invention provides a phase change memory and a preparation method thereof. The phase change memory comprises a first contact plug which sequentially penetrates through an auxiliary word line layer and an auxiliary bit line layer, and an isolation layer is arranged on the outer side wall of the first contact plug, so that mutual interference between a conductive material layer in the first contact plug and an auxiliary word line / auxiliary bit line can be avoided. Thus, the auxiliary bit lines, the auxiliary word lines and the first contact plugs can be flexibly arranged, the situation that areas with too low pattern density exist in the corresponding bit line layers and the word line layers is prevented, the film layer quality of the prepared bit line layers and the prepared word line layers can be improved, and the number of the first contact plugs can be increased. In addition, due to the fact that the arrangement areas of the auxiliary bit lines, the auxiliary word lines and the first contact plugs can allow space overlapping, the size of the device can be effectively reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a phase-change memory and a preparation method thereof. Background technique [0002] The rapid development of information technology requires a large number of high-performance storage devices. Low voltage, low power consumption, high speed and high density are the inevitable development trends of storage technology. Phase change memory PCM is a new generation of non-volatile solid-state semiconductor memory developed on the basis of CMOS integrated circuits, which has many advantages compared with today's mainstream products. For example, in terms of storage density, the current mainstream memory has a limit on the technology node of more than 20 nanometers, and cannot be further compactly integrated; while the phase change memory can reach the order of 5 nanometers. And, in terms of storage speed, the phase change resistance of phase change memory is 100 times faster t...

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a phase change memory to solve the problem of low film quality of the existing phase change memory

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