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Preparation method of graphene-carbon nanotube heterojunction

A technology of carbon nanotubes and graphene, which is applied in the field of preparation of graphene-carbon nanotube heterojunctions, can solve problems such as difficult promotion, high cost, and difficult industrial production

Active Publication Date: 2021-08-31
WENZHOU UNIVERSITY
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a preparation method for a heterojunction containing graphene-carbon nanotubes, to solve the problems that the preparation process of the heterojunction is complicated at the present stage, the cost is high, it is not easy to popularize, and it is difficult to realize industrial production

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  • Preparation method of graphene-carbon nanotube heterojunction
  • Preparation method of graphene-carbon nanotube heterojunction

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Embodiment 1

[0055] A method for preparing a graphene-carbon nanotube heterojunction, comprising the steps of:

[0056] Step 1, processing the growth substrate;

[0057] Processing the growth substrate includes the following steps:

[0058] S1, in order to clean the ST-cut quartz substrate and repair the lattice defects generated during the production and processing of the growth substrate, the growth substrate was ultrasonically cleaned in ultrapure water, acetone, ethanol, and ultrapure water in sequence, and the cleaning time was controlled 10min in each cleaning solution;

[0059] S2, dry with high-purity nitrogen;

[0060] S3, put the cleaned substrate into the muffle furnace, anneal at high temperature in the air, raise the temperature to 900 °C for 2 h, keep the temperature at 900 °C for 8 h, then cool down to 300 °C for 10 h, and cool down naturally;

[0061] Wherein, the growth substrate is one of ST-cut quartz, r-cut quartz, a-plane α-alumina, r-plane α-alumina and magnesium o...

Embodiment 2

[0076] With embodiment 1, difference is: used CuCl 2 The solution was changed to NiCl 2 NiCl at a concentration of 0.05 mmol / L 2 / EtOH solution, the Ni-containing catalyst was loaded on the surface of ST-cut quartz substrate with graphene.

[0077] The principle of preparing heterojunction: use single-layer graphene itself as an obstacle to limit the growth of single-walled carbon nanotubes, and form graphene-carbon nanotube heterojunctions at their junctions. First, a layer of single-layer graphene was peeled off by tape method on the growth substrate. Then, the metal catalyst is supported on the substrate, and carbon nanotubes are grown in a lattice-oriented growth mode. At this time, the grown carbon nanotubes are parallel to the crystal lattice direction. Utilizing the top growth mode of carbon nanotubes, the catalyst moves forward with the growth of carbon nanotubes until it touches the edge of single-layer graphene. The nanotubes were seamlessly welded together to ...

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Abstract

The invention discloses a preparation method of a graphene-carbon nanotube heterojunction. The preparation method of the graphene-carbon nanotube heterojunction comprises the following steps of 1, stripping single-layer graphene on ST-cut quartz by utilizing mechanical stripping, 2, loading a single-walled carbon nanotube grown by a catalyst on ST-cut quartz, 3, transferring the obtained graphene-carbon nanotube heterojunction to a SiO2 / Si substrate, and 4, constructing a field effect transistor FET of the single-walled carbon nanotube by using the SiO2 / Si substrate after the reaction, and exploring the electrical properties of the field effect transistor. The preparation method is simple, the quality of a finished product is good, the carbon nanotube and the graphene are welded together at a high temperature by utilizing the top end growth of the catalyst particles, and the graphene-carbon nanotube heterojunction containing the nano particles is successfully prepared.

Description

technical field [0001] The invention relates to the field of heterojunctions of nanomaterials, in particular to a method for preparing graphene-carbon nanotube heterojunctions. Background technique [0002] Since the discovery of carbon nanotubes (SWNT), graphene and other low-dimensional carbon materials, because of their perfect conjugated structure and excellent physical properties, they have been a research hotspot in the field of nanoscience. As information technology enters the post-Moore era (MoreMoore), carbon nanotube-based devices have received more and more attention, and are also considered to be one of the most potential competitors in the (More Moore) nanoelectronic device materials. With the continuous progress of the economy and society, the multi-functionality of chips and the development of miniaturization have put forward new requirements for semiconductor devices. Heterojunction is the basic core structure of semiconductor devices. Through the constructi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40C01B32/19C01B32/162
CPCC01B32/19C01B32/162H10K71/10H10K85/221H10K10/491Y02E10/549
Inventor 胡悦张红杰钱金杰黄少铭
Owner WENZHOU UNIVERSITY
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