Semiconductor device, integrated circuit, and system for forming layout thereof

A technology of integrated circuits and semiconductors, applied in the field of integrated circuits and systems that form their layouts, and semiconductor devices, can solve problems such as the impact of integrated circuit performance and reliability

Pending Publication Date: 2021-09-07
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, gate oxide breakdown has a large impact on t

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device, integrated circuit, and system for forming layout thereof
  • Semiconductor device, integrated circuit, and system for forming layout thereof
  • Semiconductor device, integrated circuit, and system for forming layout thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to limit the invention. For example, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which a first component may be formed between the first component and the second component. Additional components such that the first and second components may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various instances. This repetition is for the sake of brevity and clarity, and does not in itself indicate a relationship between the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A semiconductor device includes: a plurality of first cell rows extending in a first direction, each first cell row having a first row height; a plurality of second cell rows extending in the first direction, each second cell row having a second row height less than the first row height, wherein the first cell rows are interleaved with the second cell rows; a first cell arranged in a first row of the first cell rows; and at least one second cell arranged in at least one of the second cell rows, wherein the at least one second cell adjoins the first cell in a second direction different from the first direction, and the at least one second cell and the at least one circuit component included in the first cell have the same operational configuration. The embodiment of the invention also relates to an integrated circuit and a system for forming the layout of the integrated circuit.

Description

technical field [0001] Embodiments of the invention relate to semiconductor devices, integrated circuits, and systems for forming layouts thereof. Background technique [0002] Integrated circuits have been used in a wide variety of applications, and demands for faster processing speeds and lower power consumption are increasing. However, gate oxide breakdown has a great impact on the performance and reliability of integrated circuits. Contents of the invention [0003] According to an aspect of an embodiment of the present invention, there is provided a semiconductor device, comprising: a plurality of first cell rows extending in a first direction, each of the first cell rows having a first row height; a plurality of second Rows of cells extending in a first direction, each of the second row of cells having a second row height less than the height of the first row, wherein a plurality of first cell rows and a plurality of second cell rows are interleaved; the first cells...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/02H01L27/088G06F30/392G06F30/394G06F115/06
CPCH01L27/0207H01L27/0886G06F30/392G06F30/394G06F2115/06H01L27/092H01L23/528H01L27/088H01L21/8221H01L21/4828H01L23/535H01L23/50
Inventor 高章瑞庄惠中许力中叶松艳简永溱杨荣展林姿颖
Owner TAIWAN SEMICON MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap