Method for evaluating hot carrier effect of device
A hot carrier and device technology, which is applied in the field of evaluating the hot carrier effect of devices, and can solve the problems of slow research and development, long time, and long evaluation period.
Inactive Publication Date: 2021-09-14
CHANGXIN MEMORY TECH INC
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Problems solved by technology
However, although the conventional hot carrier effect evaluation adopts accelerated testing, it still takes a long time to complete a complete hot carrier effect evaluation of a device, and the entire evaluation period is long, making the development process relatively slow
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[0030] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.
[0031] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0032] The pr...
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The invention relates to a method for evaluating the hot carrier effect of a device. The method comprises the following steps: obtaining a ratio of a substrate current to a drain current of a first device under different gate-source voltages, and recording the ratio as a first current ratio; obtaining the ratio of the substrate current to the drain current of a second device under different gate-source voltages, and recording as a second current ratio, wherein compared with the first device, the second device is subjected to technological parameter adjustment or device parameter adjustment; and judging the influence of process parameter adjustment or device parameter adjustment on the hot carrier effect of the device based on the second current ratio and the first current ratio. By measuring the substrate current and the drain current of the device under different process parameters, the influence of the process parameters on the hot carrier effect of the device is deduced, so that whether the hot carrier effect is in a better trend or a worse trend after the process parameters are changed is judged, the adjustment direction of the hot carrier effect can be quickly determined, and the research and development process is accelerated.
Description
technical field [0001] The invention relates to the field of semiconductors, in particular to a method for evaluating device hot carrier effects. Background technique [0002] At present, for the ultra-large-scale integrated circuit manufacturing industry, with the continuous reduction of the size of MOSFET devices, it has now been reduced to submicron and deep submicron, and is developing towards ultra-deep submicron. The process of modern semiconductors is becoming more and more advanced. The length is getting shorter, the junction depth is getting shallower, and the oxide layer is getting thinner. Although the operating voltage is getting lower and lower, the reliability of semiconductor integrated circuits is facing more and more challenges. Reliability is very important to integrated circuit products, especially in the process of product development. It is very important to quickly evaluate the reliability of products to accelerate the development process. Therefore, i...
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IPC IPC(8): H01L21/66G01R31/26
CPCH01L22/14G01R31/2639H01L22/00G01R31/2858
Inventor 许杞安
Owner CHANGXIN MEMORY TECH INC