Film bulk acoustic wave device and preparation method thereof

A thin-film bulk acoustic wave and thin-film bulk technology, applied in the field of thin-film bulk acoustic wave devices and their preparation, can solve problems such as large energy consumption of bulk acoustic wave filters, and achieve the effects of reducing energy consumption, reducing driving voltage, and solving the problem of thin film layer shedding.

Inactive Publication Date: 2021-09-17
JINAN JINGZHENG ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem in the prior art that when a voltage is applied to drive the piezoelectric film to vibrate, it is necessary to appl

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  • Film bulk acoustic wave device and preparation method thereof
  • Film bulk acoustic wave device and preparation method thereof
  • Film bulk acoustic wave device and preparation method thereof

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Embodiment Construction

[0058] The present invention will be further described below in conjunction with specific embodiments, and the features and advantages of the present invention will become more clear and definite along with these descriptions.

[0059] The present invention is described in detail below.

[0060] The embodiment of the present application provides a thin-film bulk acoustic wave device, including a thin-film body with a cavity 3, a top electrode layer 5, and a bottom electrode layer 4; the thin-film body with a cavity 3 includes a first substrate layer 2 and a pressing Electric film layer 11, the cavity 3 runs through the first substrate layer 2; the bottom electrode layer 4 is deposited under the exposed piezoelectric film layer 11 in the cavity 3, and the top electrode layer 5 is deposited on The piezoelectric film layer 11 is opposite to the bottom electrode layer 4 .

[0061] like figure 1 As shown, in the thin film bulk acoustic wave device provided in the embodiment of th...

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Abstract

The invention provides a film bulk acoustic wave device and a preparation method thereof. The film bulk acoustic wave device comprises a film body with a cavity, a top electrode layer and a bottom electrode layer; the film body with the cavity comprises a first substrate layer and a piezoelectric film layer, and the cavity penetrates through the first substrate layer; the bottom electrode layer is deposited below the exposed piezoelectric film layer in the cavity, and the top electrode layer is deposited on the piezoelectric film layer and is opposite to the bottom electrode layer. Because the bulk acoustic wave generation area is the area covered by the bottom electrode layer and the top electrode layer, compared with the scheme that the two surfaces of the whole piezoelectric film layer are completely covered by the bottom electrode layer and the top electrode layer in the prior art, the film bulk acoustic wave device provided by the embodiment of the invention can reduce the driving voltage and reduce the energy consumption of an acoustic wave filter.

Description

technical field [0001] The application belongs to the field of semiconductor element preparation, and in particular relates to a thin-film bulk acoustic wave device and a preparation method thereof. Background technique [0002] With the development of science and technology, the transmission speed of big data between global systems is increasing day by day, thin film bulk acoustic wave devices are widely used in more and more areas, such as timing clocks, mobile phone radio frequency modules, etc. Thin-film bulk acoustic wave device is a radio frequency filter, which usually adopts a sandwich structure of electrode-piezoelectric film-electrode. The piezoelectric film has piezoelectricity and will generate pressure when a voltage is applied. The upper and lower electrodes of the piezoelectric film are respectively deposited on the upper and lower electrodes. When a voltage is applied to the piezoelectric film crystal, the crystal will undergo mechanical deformation and conve...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H3/08
CPCH03H9/02015H03H3/08
Inventor 张秀全朱厚彬李真宇刘桂银
Owner JINAN JINGZHENG ELECTRONICS
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