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CMOS infrared microbridge detector

A detector and micro-bridge technology, applied in the field of infrared detection, can solve the problems of low pixel scale, poor consistency, low performance, etc., and achieve the effect of small chip area, low cost, and small heat capacity

Active Publication Date: 2021-09-28
BEIJING NORTH GAOYE TECH CO LTD
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Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides a CMOS infrared micro-bridge detector, which solves the traditional MEMS process infrared focal plane The low performance of the detector, low pixel scale, low yield and poor consistency are beneficial to reduce the thermal conductance of the first columnar structure and the second columnar structure, increase the area of ​​the absorbing plate, and improve the infrared performance of the infrared microbridge detector. Detection sensitivity

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Embodiment Construction

[0062] In order to more clearly understand the above objects, features and advantages of the present disclosure, the solutions of the present disclosure will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present disclosure and the features in the embodiments can be combined with each other.

[0063] In the following description, many specific details are set forth in order to fully understand the present disclosure, but the present disclosure can also be implemented in other ways than described here; obviously, the embodiments in the description are only some of the embodiments of the present disclosure, and Not all examples.

[0064] figure 1 A schematic diagram of a three-dimensional structure of an infrared microbridge detector pixel provided by an embodiment of the present disclosure, figure 2 A schematic cross-sectional structure diagram of an infrared microbridge detector pixel provided by an embodiment of the ...

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Abstract

The present invention relates to a CMOS infrared microbridge detector. A CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared micro-bridge detector are both prepared by using a CMOS process, in the infrared micro-bridge detector, a first columnar structure is located between a reflecting layer and a beam structure, a second columnar structure is located between an absorption plate and the beam structure, the first columnar structure and the second columnar structure are hollow columnar structures, the absorption plate and the beam structure comprise electrode layers and at least two dielectric layers, and the first columnar structure and the second columnar structure at least comprise electrode layers. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared focal plane detector are solved, the thermal conductance of the first columnar structure and the second columnar structure is reduced, the area of the absorption plate is increased, and the infrared detection sensitivity of the infrared micro-bridge detector is improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to a CMOS infrared micro-bridge detector. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared focal plane detector adopts the method of combining the measurement circuit and the infrared sensing structure. -Electro-Mechanical System, micro-electro-mechanical system) process preparation, resulting in the following problems: [0004] (1) The infrared sensing structure is prepared by MEMS techno...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J5/24
CPCG01J5/24
Inventor 翟光杰潘辉武佩翟光强
Owner BEIJING NORTH GAOYE TECH CO LTD
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