Semiconductor structure and preheating method thereof

Abstract

The invention discloses a semiconductor structure and a preheating method thereof. The semiconductor structure comprises a memory chip; a temperature detection unit which is used for detecting the temperature of the memory chip before the memory chip is started; and a control chip which is used for heating the storage chip before the storage chip is started, judging whether the temperature detected by the temperature detection unit reaches a set threshold value or not, and controlling the storage chip to be started if the temperature reaches the set threshold value. When the semiconductor structure works in a low-temperature environment, the temperature of the memory chip can be raised to a set threshold value through the control chip, so that the resistance of a bit line, a word line and a metal connecting line (a metal contact part) in the memory chip can be prevented from being increased due to too low environment temperature; therefore, the time for writing data into the memory in a low-temperature environment is shortened, and the writing stability of the memory is improved.

Description

technical field [0001] The invention relates to the field of memory, in particular to a semiconductor structure and a preheating method thereof. Background technique [0002] Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is a common semiconductor memory device in computers, and its memory array area is composed of many repeated memory cells. Each memory cell usually includes a capacitor and a transistor. The gate of the transistor is connected to the word line, the drain is connected to the bit line, and the source is connected to the capacitor. The voltage signal on the word line can control the opening or closing of the transistor, and then through the bit line Read the data information stored in the capacitor, or write the data information into the capacitor through the bit line for storage. [0003] Currently, in a low-temperature environment, when writing to a memory, there is a problem that the writing time is relatively long, and the writing stabi...

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Problems solved by technology

[0003] Currently, in a low-temperature environment, when writing to the memory, there is a problem that the writing time is long, and the writing stability still needs to be improved

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