Method for reducing etching marks of silver nanowire conducting film

Abstract

The invention discloses a method for reducing etching marks of a silver nanowire conductive film, which mainly comprises the following steps of: (1) preparing conductive material ink which is composed of fine silver nanowires and metal elementary substances or compounds difficult to etch; (2) coating the surface of the substrate with the conductive material ink to form a conductive layer; (3) coating the surface of the conductive layer with a protection layer to prepare a silver nanowire conductive film; and (4) etching the silver nanowire conductive film according to a preset pattern. As a silver nanowire in the conductive material is easy to etch, and other metal elementary substances or compounds (such as metal nanorods, metal nanoparticles, metal nanosheets and passivated or metal-coated nanomaterials) are not completely etched due to relatively large sizes or low surface activity, optical supplement to an etching region is realized, and etching marks are further reduced. Compared with traditional cut-off etching of silver wires of the same specification, the method provided by the invention is large in process regulation and control space, can superpose effects, and is suitable for large-size conductive films.

Description

technical field [0001] The invention relates to the field of conductive touch materials, in particular to a method for reducing etching marks of nano-silver wire conductive films. Background technique [0002] As one of the hottest new touch materials in recent years, nano-silver wire has the advantages of good conductivity, strong bending resistance, high transmittance, and mature mass production technology. It is currently the most likely to replace ITO as a conductive touch nanotechnology to control materials. Nano-silver conductive film, like ITO, plays the role of transmitting signals. It needs to be spread on the surface of the substrate to form a conductive layer, and then form channels by laser or etching paste yellow photoetching for signal and position information. transmission. However, due to the scattering and reflection of light by silver, when the silver nanowires are etched, there is a large difference in the scattering and reflection of light between the e...

AI Technical Summary

Problems solved by technology

[0003] At present, the methods used to solve the problem of deep etching marks on the conductive film of silver nanowires include: synthesizing thinner and longer silver nanowires to reduce light scattering and reflection, but due to the large aspect ratio of silver nanowires in the process of synthesis, purification and dispersion There are major technical challenges in both

In addition, the etch marks are reduced by reducing the etch width, but the reduction of the etch width will lead to continuous etching of some channels, which will short-circuit the channels in the functional area

The truncated etching method does not have the above problems, mainly through the residual silver line to reduce the optical difference between the etched area and the non-etched area, but the process is more complicated, especially difficult to deal with large-sized conductive films

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