Parallel capacitor structure and manufacturing method thereof

Abstract

The invention discloses a parallel capacitor structure and a manufacturing method thereof, the parallel capacitor structure comprises a substrate, a groove embedded in the substrate, a plurality of electrode layers respectively filling and covering the groove along with the outline of the groove, the plurality of electrode layers are composed of a plurality of nth electrode layers, n is a positive integer from 1 to M, M is not less than 3, the nth electrode layer with the smaller number is closer to the side wall of the groove, the center of the groove is filled with the Mth electrode layer, the upper surface of the Mth electrode layer is flush with the upper surface of the substrate, a capacitor dielectric layer is arranged between the adjacent electrode layers, a first conductive plug is in contact with the nth electrode layer with the n being an odd number, and a second conductive plug contacts the n-th electrode layer where n is an even number.

Description

technical field [0001] The invention relates to a capacitor structure and a manufacturing method thereof, in particular to a parallel capacitor structure and a manufacturing method thereof. Background technique [0002] Metal-insulator-metal (MIM) capacitors have been widely used in functional circuits, such as mixed signal circuits (mixed signal circuits), analog circuits, radio frequency (RF) circuits, dynamic random access memory (DRAM), embedded Type dynamic random access memory (embedded DRAM) and logic operation circuit. Typically, a MIM capacitor includes a MIM capacitor dielectric positioned between a lower electrode and an upper electrode, which form the electrodes of the MIM capacitor. [0003] In order to cope with the increase in the number of bandwidths in the 5G generation, the number of antenna tuners must also increase. Capacitors, as components in antenna tuners, therefore need to increase their number per unit area. In order to increase the number of capa...

AI Technical Summary

Problems solved by technology

However, trenches with larger aspect ratios are more difficult to etch, and bevels often occur at the edges of the trenches, which may cause adjacent electrodes to be connected when filling capacitors later.

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