Comprehensive testing device for EUV multilayer film optical element and testing method thereof

Abstract

The invention relates to a comprehensive testing device of an EUV multilayer film optical element and a testing method thereof. The comprehensive testing device of the EUV multilayer film optical element comprises a testing unit, a gas injection module and an ArF laser module, the ArF laser module provides ArF laser for the testing unit. An EUV optical thin film sample surface pollution and control experiment is achieved in an ArF laser irradiation mode, the EUV optical thin film sample surface pollution and control experiment device has the advantages of being low in cost, convenient to use, closer to the actual working condition and safer, the gas injection module injects conversion working gas for the testing unit, and various different testing purposes can be achieved. By further changing the content of the environmental gas, the laser irradiation power and the irradiation time, the development requirements of various required EUV optical film sample surface pollution and control experiments can be met.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a comprehensive testing device and a testing method for an EUV multilayer optical element. Background technique [0002] According to the Rayleigh formula, to improve the lithographic resolution of the projection lithography objective lens, it can be achieved by reducing the exposure wavelength, reducing the process factor or increasing the numerical aperture of the projection lithography objective lens. Among them, reducing the exposure wavelength has been considered to improve the lithography resolution. The most efficient way to achieve resolution. At present, the EUVL projection lithography technology using 13.5nm extreme ultraviolet light as the working wavelength has achieved mass production at the 5nm technology node and is moving towards the 3nm technology node, becoming the most important lithography technology at present and in the future. [0003] In order to...

AI Technical Summary

Problems solved by technology

Both of the above two experimental methods have shortcomings: firstly, when using EUV light sources to carry out radiation tests, the generation and collection of EUV light requires the use of EUV optical thin film components. These EUV optical components are also prone to pollution, and the energy of such EUV light sources It is usually very low, and the required test time is not long, so the efficiency of this test method is very low and the cost is very high

Although the method of generating plasma by means of discharge is relatively low in cost, the intensity, composition and proportion of the plasma produced are quite different from those produced by EUV photons. Therefore, this test method cannot completely Truly reflect the problems that occur in the actual EUV exposure environment

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