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Wafer temperature field reconstruction device with double-layer structure

A double-layer structure, temperature field technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of complex manufacturing process, high cost, and incompatible detection tools at the same time, so as to achieve simple manufacturing process and low cost. , The effect of simple and effective data transmission

Active Publication Date: 2021-10-15
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, the present invention aims to solve the problem that the detection tool is not compatible with the existing multiple processes, the manufacturing process is complicated, and the cost is high.

Method used

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  • Wafer temperature field reconstruction device with double-layer structure
  • Wafer temperature field reconstruction device with double-layer structure
  • Wafer temperature field reconstruction device with double-layer structure

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Embodiment Construction

[0026] The present invention mainly includes a device composed of front-end temperature measurement, back-end data transmission and reception, and charging. In order to better express the technical solution of the present invention, the following is a special example of the preferred embodiment, and cooperates with the attached drawings to describe the present invention. Further explanation.

[0027] figure 1 It shows a schematic diagram of the front-end overall structure of a double-layer structure wafer temperature field reconstruction device according to a specific embodiment of the present invention, and figure 2 According to a preferred embodiment of the present invention, a top view of the front end of a double-layer structure wafer temperature field reconstruction device with the silicon cover removed, and image 3 According to a preferred embodiment of the present invention, a front side anatomical view of a double-layer structure wafer temperature field reconstructi...

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Abstract

The invention provides a wafer temperature field reconstruction device with a double-layer structure, and relates to the technical field of semiconductor test equipment. The device is mainly used for measuring wafer temperature distribution in various semi-conductive processes, and comprises a front-end temperature measurement part, a rear-end data transceiving part and a charging part. The front-end temperature measurement part is formed by attaching two processed wafers and a circuit in an assembling mode, and can adapt to various different semiconductor technologies. The rear-end data transceiving and charging device realizes good electric contact with a wafer through a simple mechanical structure. The device is simple in structure, compatible with the technology, accurate in measurement, low in cost and high in commercial value.

Description

technical field [0001] The invention relates to the technical field of semiconductor testing equipment, and discloses a wafer temperature field reconstruction device with a double-layer structure. In particular, the device is compatible with most semiconductor processes. Background technique [0002] In the semiconductor chip manufacturing process, the temperature uniformity of the wafer surface is highly required, and its temperature measurement and control are extremely important. For example, plasma etching, which is one of the key processes, in order to improve the uniformity of the etching rate and temperature distribution, and to avoid wafer defects caused by the falling of appendages on the wafer, it is generally necessary to accurately measure and measure the temperature of the wafer. Strict control. In chemical vapor deposition, the temperature of the wafer will have a huge impact on the deposition quality of the film. During rapid thermal processing, the uniformi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67
CPCH01L21/67248
Inventor 王超贾镜材陈梦朝钟业奎喻培丰张泽展牛夷姜晶
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA