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Method and device for implanting ions in wafers

A technology for implanting ions and wafers, which is applied in the direction of ion implantation plating, coating, electrical components, etc., and can solve the problem of damaging the function of the energy filter 6

Pending Publication Date: 2021-10-22
MI2 FACTORY GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, particles originating from particle-contaminated ambient air can deposit in the microstructure of the microstructured filter membrane 18 and impair the function of the energy filter 6

Method used

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  • Method and device for implanting ions in wafers
  • Method and device for implanting ions in wafers
  • Method and device for implanting ions in wafers

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Embodiment Construction

[0051] The first embodiment of the present invention will be described in more detail below. In order to achieve uniform irradiation of the wafer 8 (substrate), the ion beam 2 passing through the implant filter 6 should scan the entire surface of the wafer (substrate surface) during implantation. For this purpose, an electrostatic deflection (scanning) of the ion beam 2 is provided in combination with a mechanical movement of the filter 6 . possible structures such as Figure 4 and Figure 5 shown. Reference numeral 2 denotes an ion beam, numeral 6 denotes a filter, numeral 8 denotes a substrate / wafer, numeral 26 denotes synchronous oscillation of the filter and ion beam in the y-direction, and numeral 32 denotes oscillation of the ion beam in the z-direction.

[0052] Scanning occurs electrostatically in the y and z directions, but each direction scans differently. The scanning takes place rapidly in the z-direction so that the slit-like energy filter 6 is irradiated over...

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Abstract

Disclosed is a method comprising the irradiation of a wafer (8) by means of an ion beam (2) that passes through an implantation filter (6), the ion beam (2) being electrostatically deviated in a first direction and a second direction in order to move the ion beam (2) over the wafer (8), and the implantation filter (6) being moved in the second direction to match the movement of the ion beam (2).

Description

[0001] This application is a divisional application of Chinese Patent Application No. 201780072678.2 with the filing date of November 27, 2017, and the title of the invention is "Method and Device for Implanting Ions in a Wafer". technical field [0002] The present invention relates to a method and apparatus for implanting ions in a wafer. [0003] In a more specific aspect, the present invention relates to device-related aspects involved in the doping of semiconductors, and to the generation of defects for altering the lifetime of charge carriers in semiconductor components by using energy filters for ion implantation distributed. Background technique [0004] The following references on this subject may be cited by way of example: [0005] [1] ICSCRM2015: "Alternative highly homogeneous drift layer doping for 650 V SiC devices." -R.Rupp,W.Schustereder,Tobias Ronny Kern, Michael Rüb, Constantin Csato, Florian Krippendorf. [0006] [2] "Energy filter for tailoring depth...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/05
CPCH01J37/3171H01J37/05H01J2237/31701H01L21/265H01L29/32H01J2237/0456H01J2237/057H01J2237/31705H01J2237/31713H01J2237/31711H01J2237/0475H01L21/0465C23C14/18C23C14/48H01J37/1477H01J37/20H01J2237/024H01J2237/1518H01J2237/20214H01L21/046H01J37/317
Inventor 弗洛里安·克里彭多夫康斯坦丁·科萨托
Owner MI2 FACTORY GMBH