Voltage-stabilizing anti-creeping silicon carbide diode

Abstract

The invention provides a voltage-stabilizing anti-creeping silicon carbide diode. The voltage-stabilizing anti-creeping silicon carbide diode comprises cathode metal, a silicon carbide substrate, a silicon carbide epitaxial layer, anode metal and a SiO2 layer. A first lug boss and a second lug boss are formed on the silicon carbide substrate, a first groove is formed in the first lug boss, and a second groove is formed in the second lug boss; a first Schottky barrier is formed between the lower end of the first contact part and the silicon carbide epitaxial layer, a second Schottky barrier is formed at the junction of the second contact part and the first groove, and a third Schottky barrier is formed at the junction of the third contact part and the second groove; the distance between the first Schottky barrier and the silicon carbide epitaxial layer is a, the distance between the bottom of the second Schottky barrier and the silicon carbide epitaxial layer is b, the distance between the bottom of the third Schottky barrier and the silicon carbide epitaxial layer is c, and a > b = c. The silicon carbide diode provided by the invention has excellent voltage-stabilizing and anti-creeping characteristics.

Description

technical field [0001] The invention relates to the technical field of diodes, in particular to a voltage-stabilizing and leakage-proof silicon carbide diode. Background technique [0002] Silicon carbide materials have the characteristics of wide band gap, high breakdown field strength, high thermal conductivity, high saturation electron mobility and excellent physical and chemical stability, and are suitable for working in high temperature, high frequency, high power and extreme environments, so Some diodes are made of silicon carbide diodes using silicon carbide materials instead of traditional silicon materials. In silicon carbide diodes in the prior art, a plurality of trenches are usually added on the silicon carbide epitaxial layer to increase the area of ​​the Schottky barrier to improve the forward conduction characteristics of the Schottky diode. The conventional method is to directly set multiple trenches directly on the silicon carbide epitaxial layer. In this s...

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Problems solved by technology

The conventional method is to directly set multiple trenches directly on the silicon carbide epitaxial layer. In this structure, the position of the Schottky barrier formed by the trench position is relatively low. When the Schottky diode is forward-conducting, the trench position It is easy to generate instantaneous voltage, which affects the voltage stability of the Schottky diode during forward conduction

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