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Avalanche photodetector (variants) and method for manufacturing the same (variants)

An avalanche photoelectric and detector technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of optical signal loss, hindering photocarriers from reaching the multiplication layer, and threshold sensitivity drop

Pending Publication Date: 2021-10-29
蒂凡有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the APD according to patent RU 2,641,620, the multiplication layer is made independently of the photoelectric converter, which prevents the photocarriers generated in the photoelectric converter layer from reaching the multiplication layer, resulting in multiplied optical signal loss
This leads to a drop in threshold sensitivity, which is a fundamental parameter of APD

Method used

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  • Avalanche photodetector (variants) and method for manufacturing the same (variants)
  • Avalanche photodetector (variants) and method for manufacturing the same (variants)
  • Avalanche photodetector (variants) and method for manufacturing the same (variants)

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Embodiment Construction

[0035] Reference numerals used in this disclosure and drawings (except the number 100 (incident light)) consist of three digits, where the first digit is the figure number and the last two digits designate a specific element of the design.

[0036] For example, tag 206 points to figure 2 Element number 06 in (see list below).

[0037] The following tags are used to refer to specific elements of the design:

[0038] 01-wafer,

[0039] 02-multiplication layer,

[0040] 03-dielectric layer,

[0041] 04 - Notches filled with highly doped polysilicon,

[0042] 005-contact layer,

[0043] 06 - Avalanche Amplifier,

[0044] 07-photoelectric converter,

[0045] 08-first transparent electrode,

[0046] 09 - second electrode,

[0047] 10 - closed groove,

[0048] 11 - Layer of high resistance material.

[0049] figure 1Shows a schematic cross-section of the claimed APD according to a first embodiment, the APD comprising: a semiconductor wafer 101; a multiplication layer 102...

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Abstract

The present disclosure describes an APD comprising a photoconverter and at least one avalanche amplifier of the photocurrent, the amplifier having two layers, namely a contact layer and a multiplication layer, wherein the multiplication layer is formed on top of the entire conductive wafer, while the contact layer of at least one avalanche amplifier is formed on top of a certain area of the multiplication layer. Meanwhile, outside the contact layer, the multiplication layer functions as a photoconverter. This design makes it possible for photocarriers to get into the avalanche amplifier effectively and unimpeded. In order to mitigate the influence of parasite near-surface charge carriers on the avalanche amplifier, its multiplication region is deepened in relation to the upper surface of the photoconverter region. The proposed APD embodiment with less dark current seeping from peripheral areas of the instrument provides higher threshold sensitivity that allows it be on par with competitors.

Description

technical field [0001] The claimed invention relates to avalanche photodetectors (APDs), which are fast and highly sensitive instruments widely used in LiDAR, communication systems, machine vision, robotics, medicine, biology, environmental monitoring, and more. Background technique [0002] A conventional avalanche photodetector (APD) includes multiple semiconductor layers placed on a semiconductor wafer. [0003] A set of semiconductor layers forms a photoelectric converter in which signal photons are absorbed to generate free carriers, either electrons or electron holes. These light-generated charge carriers then enter another set of semiconductor layers, the avalanche amplifier, where they create a region inside the avalanche amplifier where the electric field is strong enough to avalanche multiply the charge carriers. [0004] In order to reduce the dark current of the avalanche amplifier and thereby improve the threshold sensitivity of the APD, the area occupied by th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/18
CPCH01L31/107H01L31/022466H01L31/1804H01L31/1884H01L31/182H01L31/028
Inventor 尼古拉·阿法纳塞维奇·科洛博夫康斯坦丁·尤列维奇·西塔斯基维塔利·埃马努伊洛维奇·舒宾德米特里·阿列克谢耶维奇·舒沙科夫谢尔盖·维塔利维奇·博格达诺夫
Owner 蒂凡有限责任公司