IGZO thin film transistor and manufacturing method thereof
A technology of thin-film transistors and manufacturing methods, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem that the increase of withstand voltage and increase of current density cannot be realized at the same time, so as to improve the withstand voltage capability of the device and increase the power density , The effect of reducing the channel on-resistance
Pending Publication Date: 2021-11-02
SOUTHEAST UNIV
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Problems solved by technology
IGZO thin film transistors must have a similar compromise relationship, and the increase in withstand voltage and current density cannot be achieved at the same time
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[0031] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings.
[0032] attached figure 1 Examples of the present invention are given in . However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to enable readers to understand the disclosure of the present invention more thoroughly and comprehensively. Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention.
[0033] The inventor believes that a new structure can be used to improve the withstand voltage capability of the device, while reducing the current density sacrifice and increasing the power density. The present invention proposes an innovative asymmetr...
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Abstract
The invention discloses an IGZO thin film transistor and a manufacturing method thereof. The IGZO thin film transistor with an innovative structure comprises a substrate, a back gate, a back gate dielectric layer, a source electrode, a drain electrode, an IGZO layer, a top gate dielectric layer and a top gate. The overlapping length of the back gate electrode layer and the drain region electrode in the horizontal position is 0.2 micrometres, and the length of the back gate electrode layer from the source region electrode in the horizontal position is 18 micrometres; the IGZO active layer is divided into a channel region of a grid control region and an offset region of a non-grid control region, the length of the channel region is 20 micrometres, and the length of the offset region is 0.1 micrometres; and the top gate electrode layer is 0.1 micrometres away from the drain region electrode in the horizontal position, and has an overlapping length of 1 micrometre with the source region electrode in the horizontal position. According to the asymmetric bigrid IGZO thin film transistor manufactured by the invention, the introduction of the offset region at the top grid can reduce the peak electric field in the top grid dielectric layer and improve the voltage withstanding characteristic of the device.
Description
technical field [0001] The invention mainly relates to the technical field of thin film transistors, in particular to an innovative structure IGZO thin film transistor. Background technique [0002] Amorphous oxide semiconductor indium gallium zinc oxide (ɑ-IGZO) thin films have attracted extensive attention from academia and industry due to their characteristics of flexibility, transparency, and large-area fabrication. Transistors based on IGZO thin films have the advantages of high mobility, high on-off current ratio, and low off-state leakage current. Divided by structure, the traditional IGZO TFT structure can be divided into four basic structures: top-gate coplanar, top-gate staggered, bottom-gate coplanar, and bottom-gate staggered. On the basis of the traditional structure, a variety of new structures are derived according to the actual application requirements. Since the first report in 2004, the research on IGZO thin film transistors has mainly focused on how to i...
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IPC IPC(8): H01L29/786H01L29/423H01L29/417H01L21/34
CPCH01L29/78648H01L29/78693H01L29/4238H01L29/41775H01L29/66969H01L29/42376
Inventor 吴汪然李梦遥杨光安孙伟锋时龙兴
Owner SOUTHEAST UNIV