Method for rapidly identifying different back silver sintering and passivating effects

A silver-backed and fast technology, applied in photovoltaic power generation, electrical components, climate sustainability, etc., can solve problems such as reduced product profits, low back-silver efficiency, long-term experiments, etc., to save economic costs, effective testing methods, The effect of saving time and cost

Pending Publication Date: 2021-11-12
江苏润阳悦达光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The whole process is not only tedious, but also requires a long time of experimentation
And although in an ideal state, the back silver efficiency of the new model is better than that of the production line, but it often happens that the back silver efficiency of the new test is lower than that of the production line, resulting in a decrease in product profits

Method used

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  • Method for rapidly identifying different back silver sintering and passivating effects
  • Method for rapidly identifying different back silver sintering and passivating effects
  • Method for rapidly identifying different back silver sintering and passivating effects

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] A method for quickly identifying different back silver sintering passivation effects, comprising the following steps:

[0040] (1) plating a silicon nitride film with a thickness of 70nm on the front side of the silicon wafer 3; plating a silicon nitride film of 80nm on the back side of the silicon wafer 3;

[0041] (2) Print the first back silver paste on the silicon wafer 3 plated with a silicon nitride passivation film;

[0042] (3) Dry the first back silver paste at 230°C after printing (the back silver effect after drying is as follows: figure 2 shown);

[0043] (4) The silicon wafer is then rotated 90°, and the second type of back silver paste is printed;

[0044] (5) The second type of back silver paste is dried again at 250°C after printing (the back silver effect after drying is as follows: image 3 shown);

[0045] (6) Place the dried silicon wafer in a sintering furnace for sintering, the initial sintering temperature is 400°C, the temperature is raised to...

Embodiment 2

[0051] A method for quickly identifying different back silver sintering passivation effects, comprising the following steps:

[0052] (1) plating a silicon nitride film with a thickness of 80nm on the front side of the silicon wafer 3; plating a silicon nitride film of 85nm on the back side of the silicon wafer 3;

[0053] (2) Print the first back silver paste on the silicon wafer 3 plated with a silicon nitride passivation film;

[0054] (3) Dry the first back silver paste at 280°C after printing (the back silver effect after drying is as follows: figure 2 shown);

[0055] (4) The silicon wafer is then rotated 90°, and the second type of back silver paste is printed;

[0056] (5) The second type of back silver paste is dried again at 280°C after printing (the back silver effect after drying is as follows: image 3 shown);

[0057] (6) Place the dried silicon wafer in a sintering furnace for sintering, the initial sintering temperature is 400°C, the temperature is raised ...

Embodiment 3

[0061] A method for quickly identifying different back silver sintering passivation effects, comprising the following steps:

[0062] (1) plating a silicon nitride film with a thickness of 75nm on the front side of the silicon wafer 3; plating a 90nm silicon nitride film on the back side of the silicon wafer 3;

[0063] (2) Print the first back silver paste on the silicon wafer 3 plated with a silicon nitride passivation film;

[0064] (3) Dry the first back silver paste at 200°C after printing (the back silver effect after drying is as follows: figure 2 shown);

[0065] (4) The silicon wafer is then rotated 90°, and the second type of back silver paste is printed;

[0066] (5) The second type of back silver paste is dried again at 200°C after printing (the back silver effect after drying is as follows: image 3 shown);

[0067] (6) Place the dried silicon wafer in a sintering furnace for sintering, the initial sintering temperature is 400°C, the temperature is raised to ...

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Abstract

The invention discloses a method for rapidly identifying different back silver sintering passivation effects. The method comprises the following steps: (1) plating passivation films on the front surface and the back surface of a silicon wafer; (2) printing a first type of back silver paste on the silicon wafer plated with the front and back passivation films; (3) drying after the first back silver paste is printed; (4) rotating the silicon wafer, and printing a second type of back silver paste; (5) after the second type of back silver paste is printed, continuously drying; (6) sintering after drying; (7) testing PL after sintering; and (8) comparing the brightness of different printing areas to analyze the passivation effects of different back silver quickly and accurately. According to the method, two types of back silver are printed on the same silicon wafer at the same time, so that the same condition of PL test is ensured, the influence of the difference of different silicon wafers on the PL test result is prevented, and the advantages and disadvantages of different types of back silver can be visually compared in adjacent small areas. The method provided by the invention provides a rapid and effective test means for introduction of novel back silver.

Description

technical field [0001] The invention relates to the technical field of solar cell production and manufacturing, in particular to a method for quickly identifying different back silver sintering passivation effects. Background technique [0002] The production process of PERC solar cells mainly includes the following processes: alkali texturing→diffusion→PSG removal→alkali polishing→oxidation→back coating→front coating→back laser slotting→back silver electrode printing→drying→back grid line printing→ Drying→positive silver electrode printing→drying and sintering→electrical injection→testing→sorting. [0003] In the manufacturing process of PERC batteries, the lower the cost, the higher the test efficiency and the greater the profit, so it is necessary to continuously reduce costs and improve efficiency to increase profits. In the process of cost reduction and efficiency improvement of solar cells, the replacement of back silver in the back silver electrode printing process i...

Claims

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Application Information

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Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L21/66H01L31/18H01L31/0224H01L31/0216
CPCH01L22/12H01L31/1804H01L31/022441H01L31/02167Y02E10/547Y02P70/50
Inventor张满满乐雄英张双玉
Owner江苏润阳悦达光伏科技有限公司