Manufacturing method of semiconductor structure, and semiconductor structure

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problem of low yield rate of semiconductor structures, achieve the effect of ensuring electrical connection and reducing distance

Pending Publication Date: 2021-11-26
SIPLP MICROELECTRONICS CHONGQING CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The yield rate of the semiconductor structure obtained by the existing semiconductor structure manufacturing technology is low

Method used

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  • Manufacturing method of semiconductor structure, and semiconductor structure
  • Manufacturing method of semiconductor structure, and semiconductor structure
  • Manufacturing method of semiconductor structure, and semiconductor structure

Examples

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Embodiment Construction

[0100] Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatuses and methods consistent with aspects of the present application as recited in the appended claims.

[0101] The terminology used in this application is for the purpose of describing particular embodiments only, and is not intended to limit the application. As used in this application and the appended claims, the singular forms "a", "the", and "the" are intended to include the plural forms as well, unless the context clearly dictates otherwise. It should also be understood that the term ...

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Abstract

The invention provides a manufacturing method of a semiconductor structure, and the semiconductor structure. The manufacturing method comprises the steps that a to-be-wired structure is provided, wherein the to-be-wired structure comprises at least one chip, the chip is provided with a front face, and the front face of the chip is provided with a plurality of welding pads; a first insulating layer is formed on the front face of the chip, the first insulating layer is provided with a plurality of openings, and each opening exposes at least part of one welding pad; a conductive film layer is formed on the side, deviating from the chip, of the first insulating layer, the conductive film layer covers the surface, deviating from the chip, of the first insulating layer and the part, exposed by the opening, of the welding pad, and the thickness of the part, located on the side, deviating from the chip, of the conductive film layer is smaller than that of the part, covering the welding pad, of the conductive film layer; the part, exceeding the first insulating layer, of the conductive film layer is removed to obtain a conductive structure which is located in the opening and is in direct contact with the welding pad; and a re-wiring structure is formed on one side, deviating from the chip, of the first insulating layer, and the re-wiring structure is electrically connected with the conductive structure.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to a method for manufacturing a semiconductor structure and the semiconductor structure. Background technique [0002] The semiconductor structure usually includes a chip and a rewiring layer on the front of the chip. The front of the chip is provided with a pad and an insulating layer on the pad. The insulating layer is provided with an opening exposing the pad. The rewiring layer passes through the conductive structure in the opening and the solder Pad electrical connections. In common semiconductor structure manufacturing techniques, the rewiring layer and the conductive portion are formed simultaneously. [0003] The yield rate of the semiconductor structure obtained by the existing manufacturing technology of the semiconductor structure is low. Contents of the invention [0004] Embodiments of the present application provide a method for manufacturing a sem...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L23/485
CPCH01L24/03H01L23/4824H01L23/485H01L2224/0231H01L2224/02331H01L2224/02333H01L2224/02381
Inventor 霍炎周文武
Owner SIPLP MICROELECTRONICS CHONGQING CO LTD
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