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A kind of low dielectric constant high entropy thin film and preparation method thereof

A low-dielectric constant, thin-film technology, applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc. To achieve very low problems, to achieve the effect of improving life, not easy to absorb water, and high mechanical strength

Active Publication Date: 2022-05-20
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the dielectric constant of low dielectric constant and high entropy films prepared by chemical vapor deposition (MOCVD) is usually difficult to achieve very low, and organic polymers are difficult to integrate into existing integrated circuits due to their poor thermal stability. in process

Method used

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  • A kind of low dielectric constant high entropy thin film and preparation method thereof
  • A kind of low dielectric constant high entropy thin film and preparation method thereof
  • A kind of low dielectric constant high entropy thin film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The preparation process of the low dielectric constant high entropy thin film of this embodiment includes the following steps:

[0036] (1) First, according to the chemical formula Ba(Zr 0.2 Sn 0.2 Ti 0.2 hf 0.2 Me 0.2 )O 3 Weigh an appropriate amount of 4N grade BaCO 3 Powder, ZrO 2 Powder, TiO 2 Powder, SnO 2 Powder, HfO 2 Powder and Nb 2 O 5 High-purity powder of powder, the above-mentioned high-purity powder mixture is ball-milled, pre-sintered, granulated, shaped and sintered, and Ba(Zr 0.2 Sn 0.2 Ti 0.2 hf 0.2 Me 0.2 )O 3 Ceramic target. In the process of preparing the ceramic target, the sintering temperature is 200°C lower than the phase-forming temperature of the system.

[0037] (2) The prepared ceramic target is first polished with sandpaper and then cleaned with an air gun, and then installed in a magnetron sputtering system in a mixed gas of argon and oxygen with a volume ratio of (3.9 to 4.1): 1 And in the room temperature sputtering env...

Embodiment 2

[0044] The preparation process of the low dielectric constant high entropy thin film of this embodiment includes the following steps:

[0045] (1) First, according to the chemical formula Ba(Zr 0.2 Sn 0.2 Ti 0.2 hf 0.2 Me 0.2 )O 3 Weigh an appropriate amount of 4N grade BaCO 3 Powder, ZrO 2 Powder, TiO 2 Powder, SnO 2 Powder, HfO 2 Powder and Nb 2 O5 High-purity powder of powder, the above-mentioned high-purity powder mixture is ball-milled, pre-sintered, granulated, shaped and sintered, and Ba(Zr 0.2 Sn 0.2 Ti 0.2 hf 0.2 Me 0.2 )O 3 Ceramic target. In the process of preparing ceramic targets, the sintering temperature is 150°C lower than the phase-forming temperature of the system.

[0046] (2) The prepared ceramic target is first polished with sandpaper and then cleaned with an air gun, and then installed in a magnetron sputtering system in a mixed gas of argon and oxygen with a volume ratio of (3.9 to 4.1): 1 And in the room temperature sputtering environm...

Embodiment 3

[0053] The preparation process of the low dielectric constant high entropy thin film of this embodiment includes the following steps:

[0054] (1) First, according to the chemical formula Ba(Zr 0.2 Sn 0.2 Ti 0.2 hf 0.2 Me 0.2 )O 3 Weigh an appropriate amount of 4N grade BaCO 3 Powder, ZrO 2 Powder, TiO 2 Powder, SnO 2 Powder, HfO 2 Powder and Nb 2 O 5 High-purity powder of powder, the above-mentioned high-purity powder mixture is ball-milled, pre-sintered, granulated, shaped and sintered, and Ba(Zr 0.2 Sn 0.2 Ti 0.2 hf 0.2 Me 0.2 )O 3 Ceramic target. In the process of preparing the ceramic target, the sintering temperature is 200°C lower than the phase-forming temperature of the system.

[0055] (2) The prepared ceramic target is first polished with sandpaper and then cleaned with an air gun, and then installed in a magnetron sputtering system in a mixed gas of argon and oxygen with a volume ratio of (3.9 to 4.1): 1 And in the room temperature sputtering env...

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Abstract

The invention relates to the field of thin film materials, in particular to a low dielectric constant high-entropy thin film and a preparation method thereof. The low dielectric constant high-entropy thin film of the present invention comprises: SrTiO 3 Substrate, placed on SrTiO 3 La on the substrate surface 0.7 Sr 0.3 MnO 3 buffer layer and set in La 0.7 Sr 0.3 MnO 3 Ba(Zr on the surface of the buffer layer 0.2 sn 0.2 Ti 0.2 f 0.2 Me 0.2 )O 3 thin film, Me is a transition metal element ion. The low dielectric constant and high entropy thin film of the invention has a relatively dense structure, and has the characteristics of low dielectric constant and low dielectric loss.

Description

technical field [0001] The invention relates to the field of ultra-large-scale integrated circuit manufacturing, in short, to a low dielectric constant high entropy thin film and a preparation method thereof. Background technique [0002] In microelectronic circuits, in order to realize the chip interconnection of ultra-large-scale integrated devices with high speed, low dynamic power consumption and low crosstalk noise, materials with low dielectric constant are required as interlayer dielectrics. For integrated circuits, the smaller the dielectric constant of the interlayer medium, the higher the interconnectivity of the circuit and the smaller the switching delay. At the same time, the threshold voltage shift caused by the moving charge is small, and the leakage current is small, thereby reducing the power consumption of the integrated circuit. In general, scientists use compounds with extremely low polarizability and introduce means such as pores to reduce the dielectri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B23/02C30B29/22C23C14/08C23C14/35
CPCC30B23/025C30B29/22C23C14/08C23C14/3457Y02P70/50
Inventor 娄晓杰乔文婧
Owner XI AN JIAOTONG UNIV