Infrared detector pixel and infrared detector based on CMOS process

Abstract

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, the infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure located on the CMOS measurement circuit system, at least one closed release isolation layer is arranged on the CMOS measurement circuit system, and the at least one closed release isolation layer is located in the CMOS infrared sensing structure; the infrared conversion structure comprises an absorption plate and a plurality of beam structures, in at least part of the orthographic projection area of the absorption plate, the closed release isolation layer located in the CMOS infrared sensor structure is etched, at least one closed release isolation layer is located on the interface between the CMOS measurement circuit system and the CMOS infrared sensor structure, and the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved, and the release difficulty of the sacrificial layer is reduced by the closed release isolation layer in the CMOS infrared sensing structure.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, and in particular to an infrared detector pixel and an infrared detector based on a CMOS process. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared sensi...

AI Technical Summary

Problems solved by technology

[0011] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present disclosure provides an infrared detector pixel and an infrared detector based on a CMOS process to solve The problems of low performance, low pixel scale and low yield rate of traditional MEMS process infrared detectors are solved. The airtight release isolation layer located in the CMOS infrared sensing structure reduces the difficulty of releasing the sacrificial layer.

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