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A kind of nitride near-infrared fluorescent material, preparation method and application thereof

A fluorescent material and near-infrared technology, applied in the field of fluorescent materials, can solve problems such as low quantum yield and achieve the effect of high quantum yield

Active Publication Date: 2022-07-29
XIAMEN UNIV
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Problems solved by technology

[0008] The purpose of the present invention is to provide a nitride near-infrared fluorescent material with crystal structure and Ca 3 [Li 4 Si 2 ]N 6 Similarly, the molecular formula of the nitride matrix is ​​(Ca 1-x-y- z Sr x Ba y Eu z ) 3 [Li a Mg b Al c Si d ]N 6 (0≤x<1; 0≤y≤0.3; 0<z≤0.02; 3.4≤a≤4; 0≤b≤0.2; 0≤c≤0.4; 1.8≤d≤2; a+2b+3c+4d =12), by doping 0.1%-2% Eu in the matrix into Ca or Sr or Ba sites, near-infrared luminescent materials can be obtained, and the quantum yield can reach up to 77%

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  • A kind of nitride near-infrared fluorescent material, preparation method and application thereof
  • A kind of nitride near-infrared fluorescent material, preparation method and application thereof
  • A kind of nitride near-infrared fluorescent material, preparation method and application thereof

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preparation example Construction

[0058] In the preparation method of the nitride near-infrared fluorescent material of the present invention, the raw material adopts the nitride corresponding to each element, for example: Ca 3 N 2 Powder, Sr 3 N 2 Powder, Ba 3 N 2 Powder, Li 3 N powder, Mg 3 N 2 Powder, AlN powder, Si 3 N 4Powder, it should be noted that the Eu source can use its nitride EuN, or Eu 2 O 3 , EuF 3 , or EuCl 2 powder, etc. The temperature for sintering and holding after mixing the raw materials is 800-1000°C, preferably 850-950°C, more preferably 865-935°C, such as 875°C, 880°C, 890°C, 900°C, or 915°C. The product obtained by sintering can be further heat-treated at a temperature of more than 500 ° C and less than 800 to 1000 ° C and kept in a hydrogen atmosphere for 1 to 10 hours to increase the Eu in the material. 2+ relative content.

[0059] Further, the product obtained by sintering can also be subjected to particle size adjustment and surface modification of the obtained flu...

Embodiment 1-14

[0062] Examples 1-14 of the present invention provide 14 kinds of Eu 2+ Activated nitride near-infrared fluorescent materials, the chemical formulas are: (Ca 0.899 Sr 0.1 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca90Sr10), (Ca 0.799 Sr 0.2 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca80Sr20), (Ca 0.699 Sr 0.3 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca70Sr30), (Ca 0.599 Sr 0.4 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca60Sr40), (Ca 0.499 Sr 0.5 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca50Sr50), (Ca 0.399 Sr 0.6 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca40Sr60), (Ca 0.299 Sr 0.7 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca30Sr70), (Ca 0.199 Sr 0.8 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca20Sr80), (Ca 0.099 Sr 0.9 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Ca10Sr90), (Sr 0.999 Eu 0.001 ) 3 [Li 4 Si 2 ]N 6 (abbreviated as Sr100), (Sr 0.899 Ba 0.1 Eu 0.001 ) 3 [Li 4 Si 2 ]N ...

Embodiment 15-25

[0070] Embodiments 15-25 of the present invention provide 11 kinds of Eu 2+ Activated nitride near-infrared fluorescent materials, the chemical formulas are: (Sr 0.999 Eu 0.001 ) 3 [Li 3.9 Al 0.3 Si 1.8 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.9 Mg 0.1 Al 0.1 Si 1.9 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.8 Mg 0.1 Si 2 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.8 Al 0.2 Si 1.9 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.7 Mg 0.1 Al 0.3 Si 1.8 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.7 Mg 0.2 Al 0.1 Si 1.9 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.6 Mg 0.2 Si 2 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.6 Mg 0.4 Si 1.8 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.7 Al 0.1 Si 2 ]N 6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.6 Mg 0.1 Al 0.2 Si 1.9 ]N6 , (Sr 0.999 Eu 0.001 ) 3 [Li 3.4 Al 0.2 Si 2 ]N 6 .

[0071] Embodiments 15-25 of the present invention provide a Eu 2+ The preparation method of the activated nitride near-infrared fluorescent material includes:

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Abstract

The invention relates to a nitride near-infrared fluorescent material and a preparation method and application thereof. The general molecular formula of the nitride near-infrared fluorescent material is (Ca 1‑x‑y‑z Sr x Ba y Eu z ) 3 [Li a Mg b Al c Si d ]N 6 , Eu element enters the crystal lattice of at least one of Ca or Sr or Ba, as a light-emitting element and an activator; in the general molecular formula, 0≤x<1; 0≤y≤0.3; 0<z≤0.02; 3.4≤a≤4; 0≤b≤0.2; 0≤c≤0.4; 1.8≤d≤2; a+2b+3c+4d=12. The material and its emission peak wavelength can reach up to 830nm and the half-peak width can reach up to 4283cm through regulation. ‑1 , the quantum yield is up to 77%, and it has good application prospects in the fields of security and detection. Simultaneously, the preparation method is simple, and it is easy for industrialization to realize large-scale production.

Description

technical field [0001] The invention relates to the technical field of fluorescent materials, in particular to a nitride near-infrared fluorescent material and a preparation method and application thereof. Background technique [0002] Near-infrared (NIR) real-time non-destructive sensing technology enables cutting-edge applications such as health monitoring, iris recognition, night vision lighting, and unmanned driving. OSRAM uses blue light diodes to excite near-infrared light-emitting materials to develop a miniaturized near-infrared spectrometer that can be used to identify food quality and monitor human health. Near-infrared sensing modules based on blue-light chips and near-infrared light-emitting materials can be easily integrated into portable devices such as mobile phones and tablets. Researchers at home and abroad are rushing to develop and expect to obtain near-infrared light-emitting materials that meet the following properties: (i) can be effectively excited by...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/59C09K11/64H01L33/50
CPCC09K11/0883C09K11/7792H01L33/502C09K11/59C09K11/64C09K11/77C01B21/0602C09K11/77348C09K11/77347C01P2002/52C01P2004/61C01P2004/62
Inventor 解荣军李淑星
Owner XIAMEN UNIV
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