Preparation equipment for forming silicon dioxide film on surface of silicon substrate

Abstract

The invention belongs to the technical field of silicon dioxide thin film preparation, and particularly relates to preparation equipment for forming a silicon dioxide thin film on the surface of a silicon substrate, aiming at the problems of temperature and substrate angle adjustment in the equipment, the following scheme is provided: the preparation equipment comprises a bracket for supporting one end of the equipment, and a temperature ring; the temperature ring is used for supporting the other end of the equipment; and one end of the temperature ring is provided with a precursor input assembly, and the other end of the temperature ring is provided with a vacuum degree adjusting assembly. A laser generator is in a slit type, forms a laser band through reflection and movably covers one side of the substrate, meanwhile, the emission angle of the laser drives an emission mirror to change according to a rotating shaft, meanwhile, atomized silicon dioxide is sprayed at the input end of a precursor, the surface of the substrate is sequentially coated with films under the irradiation of the band-shaped laser, the film coating is more stable and compact, and the whole film covering is more uniform.

Description

technical field [0001] The invention relates to the technical field of silicon dioxide film preparation, in particular to a preparation device for forming a silicon dioxide film on the surface of a silicon substrate. Background technique [0002] In the manufacture of large-scale integrated circuits, the silicon dioxide dielectric layer of components is prepared by chemical vapor deposition technology. Thin films prepared by chemical vapor deposition technology tend to be closely bonded to the substrate, have uniform density, easy to control composition and fast deposition speed. However, the thin films prepared by it often have problems of excessive thickness, surface crystal defects and particle contamination, which seriously affect the performance of components. [0003] As the authorized notification number is CN110578132A disclosed a kind of chemical vapor deposition method and device, the chemical vapor deposition method includes the chemical vapor deposition process ...

AI Technical Summary

Problems solved by technology

[0004] In the existing equipment used in the silicon dioxide preparation process, the temperature control is only in the reaction chamber, and the input gas source needs to be controlled independently. When the deposition temperature is lowered, the uneven temperature control will make the deposition effect poor. At the same time The deposition on the substrate covers the end surface of the substrate as a whole by laser, and the deposited film will be uneven due to angles, etc.

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