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Method for preparing large-size single crystal two-dimensional material based on chemical vapor deposition

A chemical vapor deposition and two-dimensional material technology, which is applied in the field of preparing large-size single-crystal two-dimensional materials based on chemical vapor deposition, can solve the problems of difficulty in forming a single-crystal structure, low quality of large-size single-crystal two-dimensional materials, etc. The effect of preparation cost, simplification of material types, and easy promotion and application

Active Publication Date: 2021-12-03
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Either in H 2 Whether Ar is used as the carrier gas, the material interaction of the growth system is only studied, and the nucleation and growth process of two-dimensional materials not only depends on the interaction between substances, but is the result of the joint influence of multiple factors. From a single Adjusting the angle will lead to low quality of large-size single-crystal two-dimensional materials, and it is difficult to form a uniform single-crystal structure. The quality of single-crystal 2D materials, obtaining large-scale 2D structures of single crystals

Method used

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  • Method for preparing large-size single crystal two-dimensional material based on chemical vapor deposition
  • Method for preparing large-size single crystal two-dimensional material based on chemical vapor deposition
  • Method for preparing large-size single crystal two-dimensional material based on chemical vapor deposition

Examples

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preparation example Construction

[0073] The Si / SiO 2 The preparation method of the substrate is as follows: the commercial Si sheet is vapor-deposited with SiO 2 layer, and the evaporated SiO 2 One side of the layer is polished to serve as the substrate.

[0074] Further, SiO 2 The thickness of the layer is 200-300nm;

[0075] Further, the distance between the different temperature zones is 15-20cm;

[0076] (2) Use inert gas to vacuum flush the furnace cavity;

[0077] Further, the furnace cavity is evacuated, and an inert gas is introduced until the pressure of the furnace cavity is 0.5-1 atm, and then the furnace cavity is evacuated, and the operation is repeated, and the furnace cavity is vacuumed;

[0078] Further, during the vacuum flushing process of the furnace cavity, the number of repetitions is 3 to 5 times to fully ensure that there is no gas irrelevant to the reaction such as oxygen and water vapor in the furnace cavity.

[0079] (3) Raise the temperature in different temperature zones resp...

Embodiment 1

[0089] A method for preparing a large-scale single-crystal two-dimensional graphene material, comprising steps as follows:

[0090] (1) Select metallic copper Cu as the substrate, and perform pretreatments such as cleaning, electrochemical polishing, and oxidation;

[0091] (2) Place the pretreated Cu substrate in the reaction furnace chamber, and then vacuumize the furnace chamber to 5×10 -5 Pa; turn off the vacuum pump unit, feed inert gas Ar, until the furnace chamber pressure is 1atm, then turn on the vacuum pump unit, pump and charge the furnace chamber, repeat 3 times, and carry out vacuum treatment to the furnace chamber;

[0092](3) Raise the temperature of the equipment to 1050°C, compare H 2 Added changes to the temperature field. Into the furnace cavity and Ar 2 (500sccm) and H 2 (10 sccm) mixed gas is used as the carrier gas, the furnace chamber is adjusted to a target pressure of 0.75 atm, and the substrate is pre-annealed for 60 min. Under this condition, th...

Embodiment 2

[0104] A preparation of large-size single-crystal two-dimensional MoSe 2 The material method comprises the following steps:

[0105] (1) Evaporate 300nm thick SiO on a commercial Si wafer 2 layer, and is evaporated with SiO 2 One side of the layer is polished as a substrate;

[0106] (2) Treated Si / SiO 2 The substrate is placed in the furnace chamber, and the polishing surface is aligned with MoO 3 Precursor; the Se powder precursor is placed in front of the substrate with a distance of 20cm;

[0107] (3) Then the furnace chamber is evacuated, and the vacuum degree is not higher than 5×10 -5 Pa; turn off the vacuum pump unit, feed inert background gas until the furnace cavity pressure is 1 atm, then turn on the vacuum pump unit, pump and charge the furnace cavity, repeat 3 times, and carry out vacuum treatment to the furnace cavity;

[0108] (4) Set the program heating respectively, the temperature of the Se area is raised to 250°C, and the heating rate is 10°C / min; Si / S...

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Abstract

The invention belongs to the field of two-dimensional material preparation, and particularly relates to a method for preparing a large-size single-crystal two-dimensional material based on chemical vapor deposition. The method comprises the steps that carrier gas A and carrier gas B are mixed to serve as current-carrying gas, a near-flat micro-convex temperature field is constructed by setting a ratio of the carrier gas A to the carrier gas B, then a flat temperature field is constructed by adjusting the ratio of the carrier gas A to the carrier gas B, and then, the large-size single-crystal two-dimensional material is obtained through chemical vapor deposition, wherein the carrier gas A is inert gas, and the carrier gas B is gas different from the carrier gas A in thermal conductivity. According to the invention, gases which do not participate in the chemical reaction of the two-dimensional material and have different thermal conductivities are introduced into a reaction chamber, so interaction between substances is enhanced, the temperature field in the reaction chamber is effectively regulated and controlled, the conversion from the convex temperature field to the flat temperature field in the growth area of the two-dimensional material is designed and realized, the temperature driving force is fully provided; and thus, transverse growth of a two-dimensional material core is promoted, and finally, the high-quality large-size single-crystal two-dimensional material is obtained.

Description

technical field [0001] The invention belongs to the field of preparation of two-dimensional materials, and in particular relates to a method for preparing large-size single-crystal two-dimensional materials based on chemical vapor deposition. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] The successful preparation of graphene in 2005 broke the theory that two-dimensional materials are thermodynamically unstable and cannot exist. In recent years, with the further development of scientific research, new two-dimensional layered materials have been discovered continuously, and exhibit unique electrical, optical, magnetic and other physical properties, and have shown great p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/02C30B25/14
CPCC30B25/02C30B25/14
Inventor 赵显孙丽王鹏国星张雪李妍璐于法鹏
Owner SHANDONG UNIV
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