Method for making array waveguiding grating by collosol and gel photoinduction

Abstract

The invnetion relates to a method of processing the array wave guide gate (AWG) with SiO2 / Si by sol and gel optic induced refractieily variety with the monocrystal silicon as the substrate to grow lower coating, waveguide chip and up coating on it in sequence to make AWG graph on the waveguide chips coating by modulating sol-rotating coating-sintering-mask-optic induction. The sol is prepared with mixing melaselicic acid carbethoxy, alcohol and hydrochloric acid and adding the precursor with Sn after digestion and filtration which will be coated and rotated even on the lower packet and sintered with the temperature of 400 deg.C. The optical iduction is to irradiate the mask plate with ultraviolet ray to make the refraction change of the photic zone of SiO2 wafer with Sn to form the waveguide so as to control the mixed quantity and the thick ness of waveguide core instead of durable etching equipments of ionic reacting with large amplitude of modulation for optic inductive refraction.

Description

technical field [0001] The invention belongs to a manufacturing method of a wavelength division multiplexing device, in particular to a sol-gel light-induced refractive index change method for manufacturing tin-doped SiO 2 / Si-based array waveguide grating method. Background technique [0002] Arrayed waveguide grating (AWG) is a key device in Dense Wavelength Division Multiplexing / Demultiplexing (DWDM) system. It has small propagation loss and high coupling efficiency with optical fiber. It is considered to be the most promising new type of WDM Multiplexing devices. The structure of the AWG device includes a lower cladding layer, a waveguide core layer, and an upper cladding layer grown sequentially on a single crystal silicon substrate, and an AWG pattern is made on the waveguide core layer. [0003] Arrayed waveguide gratings are usually fabricated by flame hydrolysis plus reactive ion etching. That is, a layer of silicon dioxide (SiO2) is deposited on a single crystal...

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to overcome the deficiencies of the background technology, to find an economical and quick process to manufacture AWG devices, no longer use expensive etching equipment, and to adjust the central wavelength; it is beneficial to optimal design; it is easy to control the waveguide core Process of Layer Thickness and Doping to Fabricate AWG Devices