Preparation method of fin type semiconductor device

Abstract

The invention provides a fin-type semiconductor device preparation method, and the method comprises the steps: providing a substrate which comprises a PMOS region and an NMOS region; etching to remove partial thickness of the substrate in the PMOS region; forming a fin material layer on the substrate in the PMOS region and the NMOS region in a shape-preserving manner; sequentially forming a first mask layer and a second mask layer on the fin material layer in a conformal manner; carrying out grinding to remove a part of thickness of the second mask layer; carrying out the etching to remove the first mask layer, the second mask layer, the fin material layer of the NMOS region and the fin material layer of partial thickness of the PMOS region; forming a fin of the NMOS tube in the NMOS region, and forming a fin of the PMOS tube in the PMOS region. According to the invention, the height difference between the fins of the NMOS transistor and the fins of the PMOS transistor is reduced.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, and more particularly to a method of preparing a fin semiconductor device. Background technique [0002] Fin Field Effect Transistor, FINFET is a complementary metal oxidation semiconductor field effect transistor, including a vertical type channel structure, also known as fins, fins on both sides of the fin, FinFET structure Make more devices, higher performance, and fins-type semiconductor devices have been widely used in the field of memory and logic devices. As the size of the device is constantly reduced, in order to improve the carrier mobility in the fin field effect transistor, the performance of the transistor is improved, and the PMOS tube in the general fin field effect transistor will use germanic silicon to form fin to improve. The mobility of the carrier of the PMOS tube, while the NMOS tube still uses silicon to form fin, while silicon and silicon are located in different...

AI Technical Summary

Problems solved by technology

With the continuous reduction of device size, in order to improve the carrier mobility in the fin field effect transistor and improve the performance of the transistor, generally the PMOS transistor in the fin field effect transistor will use silicon germanium to form fins to improve The carrier mobility of the PMOS tube, while the NMOS tube still uses silicon to form fins, and silicon and silicon germanium are located in different regions. If the surface of silicon and silicon germanium is directly planarized by chemical mechanical polishing, it is easy to The surface of silicon germanium and silicon is damaged, and the flatness of the silicon germanium and silicon surfaces is poor, and the poor flatness will cause a difference in the height of the fins of the PMOS tube and the fins of the NMOS tube, thereby affecting the working speed of the device

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