Preparation method of fin type semiconductor device

Abstract

The invention provides a fin-type semiconductor device preparation method, and the method comprises the steps: providing a substrate which comprises a PMOS region and an NMOS region, and forming a first fin material layer on the substrate in the PMOS region; forming a second fin material layer on the substrate, wherein the second fin material layer covers the substrate of the NMOS region and the first fin material layer in a shape-preserving manner; forming a mask layer on the second fin material layer in a conformal manner; performing grinding to remove partial thickness of the mask layer; performing etching to remove the mask layer, the second fin material layer of the PMOS region and the second fin material layer of partial thickness of the NMOS region; forming a fin of the NMOS tube in the NMOS region, and forming a fin of the PMOS tube in the PMOS region. According to the invention, the height difference between the fins of the NMOS transistor and the fins of the PMOS transistor is reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a fin-type semiconductor device. Background technique [0002] Fin Field effect transistor (Fin Field effect transistor, FinFET) is a complementary metal oxide semiconductor field effect transistor, including a vertical channel structure, also known as fins, fins are surrounded by gate structures on both sides, FinFET structure Making devices smaller and higher in performance, fin-type semiconductor devices have been widely used in the field of memory and logic devices. With the continuous shrinking of the device size, in order to improve the carrier mobility in the fin field effect transistor and improve the performance of the transistor, generally the PMOS transistor in the fin field effect transistor will use silicon germanium to form fins to improve The carrier mobility of the PMOS tube, while the NMOS tube still uses silicon to form fins, and s...

AI Technical Summary

Problems solved by technology

With the continuous reduction of device size, in order to improve the carrier mobility in the fin field effect transistor and improve the performance of the transistor, generally the PMOS transistor in the fin field effect transistor will use silicon germanium to form fins to improve The carrier mobility of the PMOS tube, while the NMOS tube still uses silicon to form fins, and silicon and silicon germanium are located in different regions. If the surface of silicon and silicon germanium is directly planarized by chemical mechanical polishing, it is easy to The surface of silicon germanium and silicon is damaged, and the flatness of the silicon germanium and silicon surfaces is poor, and the poor flatness will cause a difference in the height of the fins of the PMOS tube and the fins of the NMOS tube, thereby affecting the working speed of the device

Images