Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Atomic gas chamber non-magnetic transparent electric heating film preparation method based on laser direct writing

A laser direct writing, atomic gas chamber technology, applied in ohmic resistance heating, electric heating devices, heating element materials, etc., can solve the problems of temperature control accuracy and uneven heating, limited temperature control accuracy, limited heating power, etc. And the magnetic field control is accurate and controllable, meets the requirements of non-magnetization, and has excellent working effect.

Pending Publication Date: 2021-12-24
BEIHANG UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the temperature control accuracy of airflow heating is limited, and the airflow will introduce certain mechanical disturbances
Airflow heating is more suitable for the initial experimental platform. It has the advantages of high heating power and simple implementation. However, for the miniaturized prototype system, its large volume, disturbance introduced by airflow, limited temperature control accuracy and insufficient heating Problems such as uniformity are factors that limit its use
Laser heating is mostly suitable for chip-level atomic sensors. Using non-resonant lasers to heat MEMS gas chambers (MEMS, Micro-Electro-Mechanical System, Micro-Electro-Mechanical System) can avoid the introduction of magnetic field interference in principle, but this The method needs to pay special attention to the interference effect of the heating laser light source, and the heating power is relatively limited, which limits its applicable scenarios to a certain extent, and has certain limitations for the application in miniaturized prototypes

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Atomic gas chamber non-magnetic transparent electric heating film preparation method based on laser direct writing
  • Atomic gas chamber non-magnetic transparent electric heating film preparation method based on laser direct writing
  • Atomic gas chamber non-magnetic transparent electric heating film preparation method based on laser direct writing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Below with the accompanying drawings ( Figure 1-Figure 3 ) and Examples illustrate the present invention.

[0019] figure 1 It is a schematic diagram of a micropattern with an octopole configuration produced by implementing a laser direct writing-based atomic air chamber non-magnetic transparent electric heating film preparation method of the present invention. figure 2 so figure 1 It is a schematic diagram of the current direction configuration of each graphene wire in the eight-layer GO film based on the eight-layer GO film. image 3 It is a schematic diagram of an 8-layer GO thin film made by implementing a laser direct writing-based atomic gas chamber non-magnetic transparent electric heating film preparation method of the present invention. refer to Figure 1 to Figure 3 As shown, a laser direct writing-based atomic air chamber non-magnetic transparent electric heating film preparation method uses laser direct writing reduction technology to produce line-type...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of a non-magnetic transparent electric heating film of an atomic gas chamber based on laser direct writing, which comprises the following steps of: manufacturing a circuit type micro-pattern on a graphene oxide light-transmitting film with an insulating property by utilizing a laser direct writing reduction technology for performing non-magnetic electric heating around the atomic gas chamber; so that the temperature and the magnetic field of the atomic gas chamber can be more accurately and controllably controlled, and the working effect of the device is more excellent. The two key points of the method are as follows: one is that a novel graphene material is adopted, and the other is that the problems that the existing MEMS silicon heating film is opaque and cannot be directly attached to the atomic gas chamber and the transparent heating film has magnetism are solved.

Description

technical field [0001] The present invention relates to atomic air chamber heating technology, in particular to a method for preparing an atomic air chamber non-magnetic transparent electric heating film based on laser direct writing, which is fabricated on a graphene oxide light-transmitting film with insulating properties by using laser direct writing reduction technology The outgoing line micropattern is used for non-magnetized electric heating around the atomic gas chamber, which can help to control the temperature and magnetic field of the atomic gas chamber more precisely and controllably, so that the working effect of the device is more excellent. Background technique [0002] For the heating of the atomic gas chamber, the existing heating methods mainly include hot air heating, laser heating, non-magnetic electric heating and so on. The airflow heating is relatively simple to implement, the heating power is large, and the heating device is outside the magnetic shield...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/19H05B3/00H05B3/14H05B3/20
CPCC01B32/19H05B3/20H05B3/00H05B3/145
Inventor 柴真田中兴
Owner BEIHANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products