Single photon avalanche diode image sensor pixel device and preparation method thereof

Abstract

The invention discloses a single photon avalanche diode image sensor pixel device and a preparation method thereof, and the pixel device comprises a substrate; a first P-type silicon doped region arranged in the substrate; an N-type epitaxial layer arranged on the substrate, wherein a second P-type silicon doped region, a third P-type silicon doped region, a fourth P-type silicon doped region and an N-type silicon doped region are arranged in the N-type epitaxial region. The second P-type silicon doped region, the fourth P-type silicon doped region and the third P-type silicon doped region are sequentially arranged on the upper surface of the first P-type silicon doped region from left to right; an N-type silicon doped region is arranged on the fourth P-type silicon doped region and is used for forming a PN junction. A first isolation region is arranged between the second P-type silicon doped region and the N-type silicon doped region, and a first isolation region is arranged between the third P-type silicon doped region and the N-type silicon doped region; and second isolation regions are arranged on one side, far away from the first isolation region, of the second P-type silicon doped region and one side, far away from the first isolation region, of the third P-type silicon doped region.

Description

technical field [0001] The technical field of diodes of the present invention particularly relates to a single photon avalanche diode image sensor pixel device and a preparation method. Background technique [0002] D-ToF imaging technology, the full name is Direct Time Of Flight, that is, direct flight time. The basic principle is that the pulsed light source emits laser pulses into the scene, which is reflected on the object, and the reflected laser echo will be imaged on the optical sensor under the action of the lens. By calculating the time difference between the laser emission and the received echo, the The distance to the object can be calculated. Three-dimensional imaging in a certain field of view can be achieved by using a mechanical structure or a photosensor design with a certain resolution. D-ToF imaging technology was first proposed by Western countries and put into commercial use, playing an increasingly important role in the acquisition of 3D graphics. [...

AI Technical Summary

Problems solved by technology

[0005] However, the single photon avalanche diode in the related art has the problem of limited device size and electronic crosstalk between adjacent pixel devices.

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