Thin-film capacitor bank and low-stray-inductance busbar suitable for high-voltage SiC MOSFET module
A technology of thin-film capacitors and capacitor groups, which is applied in the field of power devices, can solve the problems of large single high-voltage thin-film capacitor noise, high cost, and difficulty in effectively reducing the noise of the absorbing capacitor group, so as to improve power density, small noise, and reduce size Effect
Inactive Publication Date: 2022-01-14
忱芯电子(苏州)有限公司
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Problems solved by technology
[0002] At present, the conventional busbar film capacitors of various capacitor manufacturers generally have a withstand voltage below 1300V. In the design of absorbing capacitors for higher voltage SiCMOSFET modules (≥1300V), it is usually necessary to use a laminated busbar plus custom film capacitor design. Customized capacitors and busbars will lead to higher costs. At the same time, custom-made high-voltage film capacitors usually have a large single noise, which makes it difficult to effectively reduce the noise of the entire absorption capacitor group.
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[0027] Below in conjunction with appendix this application is described in further detail.
[0028] The application first discloses a film capacitor group, such as figure 1 As shown, two low-voltage film capacitors 1 are included, and the two low-voltage film capacitors 1 are connected in series through a PCB board 2 . In this application, two conventional low-voltage film capacitors 1 are connected in series through a small PCB board 2 to synthesize a film capacitor group, which reduces the noise of the capacitor group to below 30nH, which is usually smaller than the custom-made high-voltage film capacitor, so that it is suitable for high-voltage Low noise busbars for SiC MOSFET modules.
[0029] The present application also discloses a low-inductance busbar suitable for high-voltage SiC MOSFET modules, such as figure 2 and image 3 As shown, it includes a plurality of the above-mentioned thin film capacitor groups 10, the thin film capacitor groups 10 are connected to th...
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The invention relates to a power device, and discloses a thin-film capacitor bank and a low-stray-inductance busbar suitable for a high-voltage SiC MOSFET module. The low-stray-inductance busbar suitable for the high-voltage SiC MOSFET module comprises a plurality of thin-film capacitor banks, wherein the thin-film capacitor banks are connected to a PCB substrate, the thin-film capacitor banks on each surface of the PCB substrate are respectively arranged in an array mode, the thin-film capacitor banks on the front and back surfaces are arranged in a staggered mode, the thin-film capacitor banks are arranged close to the power module interfaces of an SiC MOSFET module, each thin-film capacitor bank comprises two low-voltage thin-film capacitors, and the two low-voltage thin-film capacitors 1 are connected through a PCB. According to the thin-film capacitor bank and the low-stray-inductance busbar suitable for the high-voltage SiC MOSFET module, the cost of an absorption capacitor busbar of the SiC MOSFET module is greatly reduced, stray inductance of the absorption capacitor busbar is reduced, the manufacturing difficulty is reduced, and the power density of the whole capacitor busbar is improved.
Description
technical field [0001] The present application relates to power devices, in particular to a thin-film capacitor bank and a low-inductance busbar suitable for high-voltage SiC MOSFET modules. Background technique [0002] At present, the conventional busbar film capacitors of various capacitor manufacturers generally have a withstand voltage below 1300V. In the design of absorbing capacitors for higher voltage SiCMOSFET modules (≥1300V), it is usually necessary to use a laminated busbar plus custom film capacitor design. Customized capacitors and busbars will lead to higher costs. At the same time, custom-made high-voltage film capacitors usually have a large single noise, which makes it difficult to effectively reduce the noise of the entire absorption capacitor group. Contents of the invention [0003] In order to reduce costs and reduce noise at the same time, this application provides a thin film capacitor bank and a low noise busbar suitable for high-voltage SiCMOSFET ...
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IPC IPC(8): H01G4/33H01G4/38H05K1/18H02M1/00
CPCH01G4/33H01G4/38H05K1/18H02M1/00Y02B70/10
Inventor 刘弘耀毛赛君陈俊
Owner 忱芯电子(苏州)有限公司