Preparation method of solid focal plane detector and solid focal plane detector

Abstract

The invention relates to a preparation method of a solid focal plane detector and the solid focal plane detector. The preparation method comprises the following steps of preparing a CMOS measurement circuit system and a CMOS infrared sensing structure by adopting a CMOS process, wherein the preparation of the CMOS infrared sensing structure comprises the substeps of preparing a first metal interconnection layer on top-layer metal of a CMOS measurement circuit system by adopting an RDL process or taking the top-layer metal of the CMOS measurement circuit system as a first metal interconnection layer; preparing an interconnection column by adopting a through hole process; and depositing a second metal interconnection layer above the interconnection column, etching the second metal interconnection layer to form a patterned electrode structure so as to form a beam structure and a part of the absorption plate, depositing a second dielectric layer, and etching the second dielectric layer to form a patterned dielectric layer so as to form the absorption plate, wherein the second dielectric layer is a heat-sensitive dielectric layer. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of the solid focal plane detector of a traditional MEMS process are solved, and the performance of the solid focal plane detector is optimized.

Description

technical field [0001] The invention relates to the technical field of infrared detection, in particular to a method for preparing a solid focal plane detector and the solid focal plane detector. Background technique [0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand. [0003] At present, the solid focal plane detector adopts the method of combining the measurement circuit and the infrared sensing structure. -Electro-Mechanical System, micro-electro-mechanical system) process preparation, resulting in the following problems: [0004] (1) The infrared sensing...

AI Technical Summary

Problems solved by technology

[0010] In order to solve the above-mentioned technical problems or at least partly solve the above-mentioned technical problems, the present invention provides a method for preparing a solid focal plane detector and a solid focal plane detector, which solves the problem of low performance of the traditional MEMS process solid focal plane detector, and the pixel Low scale, low yield and poor uniformity issues, optimizing the performance of solid focal plane detectors

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