Preparation method of CMOS infrared detector with solid column and infrared detector

An infrared detector and solid column technology, applied in the field of infrared detectors, can solve the problems of low infrared detector performance, low pixel scale, and poor consistency, and achieve the effects of high detection sensitivity, small chip area, and small size

CN113945286AActive Publication Date: 2022-01-18BEIJING NORTH GAOYE TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Publication Date
2022-01-18

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Abstract

The invention relates to a preparation method of a CMOS infrared detector with a solid column and the infrared detector. The preparation method comprises the following steps of preparing a CMOS measurement circuit system and a CMOS infrared sensing structure by adopting a CMOS process, wherein the preparation of the CMOS infrared sensing structure comprises the substeps of preparing a first metal interconnection layer on top-layer metal of a CMOS measurement circuit system by adopting an RDL process or taking the top-layer metal of the CMOS measurement circuit system as the first metal interconnection layer; preparing a first interconnection column by adopting a through hole process and a CMP planarization process; depositing a second metal interconnection layer above the first interconnection column to form a beam structure; depositing a third metal interconnection layer to form a second interconnection column; and depositing a fourth metal interconnection layer and a second dielectric layer to form the absorption plate. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared detector are solved, and the performance of the infrared detector is optimized.
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Description

technical field

[0001] The invention relates to the technical field of infrared detection, in particular to a preparation method of a CMOS infrared detector with a solid column and the infrared detector. Background technique

[0002] Surveillance market, automotive auxiliary market, home furnishing market, intelligent manufacturing market, and mobile phone applications all have strong demand for uncooled high-performance chips, and have certain requirements for chip performance, performance consistency, and product prices. It is estimated that there is a potential demand of more than 100 million chips every year, but the current process scheme and architecture cannot meet the market demand.

[0003] At present, the infrared detector adopts the method of combining the measurement circuit and the infrared sensing structure. The measurement circuit is prepared by CMOS (Complementary Metal-Oxide-Semiconductor, Complementary Metal Oxide Semiconductor) technology, and the infrared...

Examples

Embodiment Construction

[0061] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the solutions of the present invention will be further described below. It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0062] In the following description, many specific details have been set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here; obviously, the embodiments in the description are only some embodiments of the present invention, and Not all examples.

[0063] figure 1 It is a schematic flowchart of a method for manufacturing a CMOS infrared detector with solid columns provided by an embodiment of the present invention. The preparation method of the CMOS infrared detector with solid columns can be applied in the application ...