Unipolar differential logic static random access memory unit and random access memory

Abstract

The invention discloses a unipolar differential logic static random access memory unit and a random access memory, the random access memory unit comprises a unipolar differential logic phase inverter, the unipolar differential logic phase inverter comprises a main circuit and an auxiliary pull-up path, and cross-coupled pull-down tubes are adopted in the main circuit to form a positive feedback structure so as to reduce static power consumption; a gate control module which comprises a write switch and a read switch, and when the write switch is switched on, the unipolar differential logic static random access memory unit writes and stores data; and when the read switch is switched on, data stored in the unipolar differential logic static random access memory unit is read. The pull-down tube of the unipolar differential logic static random access memory unit adopts a cross coupling connection mode to form a positive feedback structure, so that a closed TFT (Thin Film Transistor) always exists from a power supply to the ground in a stable state, a static direct-current path is eliminated, static power consumption is reduced, and output voltage swing is improved. The invention can be widely applied to static random access memories.

Description

technical field [0001] The invention relates to a static random access memory, in particular to a unipolar differential logic static random access memory unit and a random access memory. Background technique [0002] At present, the demand for new intelligent hardware in the information society continues to rise, and various flexible and transparent electronic products are constantly being proposed. These products have many new features, such as bendable, stretchable, foldable, transparent, ultra-light, etc. , while the preparation cost is low. The latest advances in the performance of thin-film transistors (TFTs) make it imperative to use them to replace traditional silicon-based field-effect transistors in the design and manufacture of multi-functional integrated circuits on specific substrates. [0003] Although thin-film transistor (TFT) technology has many advantages, metal oxide TFT currently only has N-type transistors with good performance, and there is no mature P-...

AI Technical Summary

Problems solved by technology

In this case, thin-film transistor circuits can only be realized based on unipolar transistors, and CMOS technology of traditional silicon-based processes cannot be used.

Therefore, the current unipolar static random access memory circuit has disadvantages such as small swing, high power consumption, and single port.

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