HEMT device with tunneling enhanced vertical structure

Abstract

The invention provides an HEMT device with a tunneling enhancement type vertical structure. The HEMT device comprises: a substrate; a buffer layer disposed on one surface of the substrate; a current blocking layer arranged on the surface, away from the substrate, of the buffer layer; a channel layer which covers the current blocking layer and a part of the buffer layer; a source electrode arranged on the surface, away from the current blocking layer, of the channel layer; a barrier layer which is arranged on the surface, far away from the substrate, of the channel layer and is in contact with the source electrode; an insulating dielectric layer which covers the barrier layer and the other part of the buffer layer; grid electrodes which are arranged on the surface, away from the buffer layer, of the insulating dielectric layer and arranged on the two sides of the source electrode; and a drain which is arranged on the surface, away from the buffer layer, of the substrate. According to the invention, the grid electrodes are designed on the two sides close to the source electrode, the current blocking layer is designed below the source electrode, source electrode metal with a high work function makes contact with the two-dimensional electron gas phase of the heterojunction contact face to form a Schottky junction, and under regulation and control of the grid electrodes, formed tunneling current can be used for preparing an enhanced HEMT device.

Description

technical field [0001] The present invention relates to the technical field of semiconductor device design, in particular, the present invention relates to a HEMT device with a tunneling enhanced vertical structure. Background technique [0002] The gallium nitride (GaN) high electron mobility transistor (HEMT) structure at this stage is dominated by lateral devices. The lateral device mainly includes a substrate, a GaN buffer layer, an AlGaN barrier layer, and a source, a drain, and a gate formed on the AlGaN barrier layer, wherein the source and the drain form an ohmic contact with the AlGaN barrier layer, and the gate A Schottky contact is formed with the AlGaN barrier layer. However, for lateral GaN HEMTs, in the off state, electrons injected from the source can pass through the GaN buffer layer to the drain to form a leakage channel. Excessive buffer layer leakage current will also lead to early breakdown of the device, which cannot fully Taking advantage of the high ...

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Problems solved by technology

[0004] Although the vertical HEMT structure can take into account the withstand voltage and miniaturization design, it still belongs to a depletion-type GaN HEMT device

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