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Optoelectronic integrated device and preparation method thereof

An integrated device and optoelectronic technology, applied in the field of optical communication, can solve problems such as system failure and laser damage, reduce placement accuracy, improve reliability and practicability, and avoid the effects of thermal stability and reliability.

Active Publication Date: 2022-01-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above problems, the present disclosure provides an optoelectronic integrated device and its preparation method, which are used to at least partially solve technical problems such as laser damage in traditional optoelectronic integrated devices leading to the failure of the entire system

Method used

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  • Optoelectronic integrated device and preparation method thereof

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Embodiment Construction

[0021] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the present disclosure will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0022] Embodiments of the present disclosure provide an optoelectronic integrated device, please refer to figure 1 , including: a first laser 1 ; a second laser 2 ; an optoelectronic integrated chip 3 , the first laser 1 and the second laser 2 are optically connected and coupled to the optoelectronic integrated chip 3 through a photon lead 4 .

[0023] Specifically, the first laser 1 can be a main laser, and the second laser can be a backup laser. Generally, the first laser 1 provides a light source as the main laser of an optoelectronic integrated device, and the second laser is in a dormant state, but when the first laser 1 is due to When the normal working state cannot be maintained due to electrostatic damage or a...

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Abstract

The present invention provides an optoelectronic integrated device, which comprises: a first laser device (1); a second laser device (2); and anoptoelectronic integrated chip (3), wherein the first laser device (1) and the second laser device (2) are optically connected and coupled with the optoelectronic integrated chip (3) through a photon lead (4). The invention also provides a preparation method of the optoelectronic integrated device. According to the device, under the condition that the structure and the size of the optoelectronic integrated device are not greatly changed, dual-light-source backup of the optoelectronic integrated device is achieved, the reliability and the practicability of the optoelectronic integrated device are improved, and research of the optoelectronic integrated technology and development of commercial application are facilitated.

Description

technical field [0001] The present disclosure relates to the technical field of optical communication, in particular to an optoelectronic integrated device and a preparation method thereof. Background technique [0002] In the past decade, research and commercialization of silicon photonics have been intensified with the dramatic improvement and expansion of photonic device performance and photonic integration complexity, where the key factor for applying silicon to photonics is that silicon waveguides have dimensions Advantages of compactness, excellent uniformity and low loss. Today, CMOS packaging technology is being used in silicon photonic integrated circuits (PICs), thereby greatly reducing its cost and improving scalability. With the continuous increase in bandwidth requirements, the interconnection bandwidth of data centers has developed from 100G to 400G. To enable future scaling of bandwidth requirements, silicon photonic integrated circuits (PICs) are evolving f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/42
CPCG02B6/4204G02B6/4269Y02P70/50
Inventor 王欣郭丹丹杨国亮翟鲲鹏祝宁华李明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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