Inductively coupled plasma device and semiconductor thin film equipment
A plasma and inductive coupling technology, which is applied in semiconductor/solid-state device manufacturing, circuits, discharge tubes, etc., can solve the problems of limited distribution uniformity and changes in the overall impedance of antennas and antennas, and achieve wide application value and versatility High, simple structure effect
Active Publication Date: 2022-02-08
盛吉盛(宁波)半导体科技有限公司
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Problems solved by technology
However, with the expansion of the size of the substrate to be processed, limited by the antenna design requirements (length and number of turns of the antenna, etc.), the effect of these adjustment methods on the uniformity of ion distribution in the plasma is increasingly limited, while expanding The size of the antenna and changing the structure of the antenna will lead to large changes in the overall impedance of the antenna and other electrical properties, which put forward more stringent requirements for the design of the RF power supply and impedance matching network
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[0052] In order to further illustrate the present invention, the specific implementation manners of an inductively coupled plasma device and semiconductor thin film equipment proposed according to the present invention will be described in detail below in conjunction with the accompanying drawings.
[0053] The inductively coupled plasma device includes a radio frequency power source 1 , an impedance matching network 2 (impedance matching network), several sets of antennas 3 (antenna), and a vacuum chamber 4 . The radio frequency power supply 1 , the impedance matching network 2 and the antenna 3 are connected in sequence to generate an electromagnetic field in the vacuum chamber 4 , and then make the gas in the vacuum chamber 4 generate plasma through electromagnetic induction.
[0054] In the inductively coupled plasma device, the three-dimensional or planar antenna 3 is placed close to the isolation cover plate 5 of the vacuum chamber 4, and is connected to the radio frequen...
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Abstract
The invention discloses an inductively coupled plasma device and semiconductor thin film equipment. The inductively coupled plasma device comprises a plasma device body and an isolation cover plate covering the plasma device body. The isolation cover plate comprises an isolation cover plate body, and a protruding structure arranged on the inner side face, facing the cavity of the inductively coupled plasma device, of the isolation cover plate body. The protruding structure and the isolation cover plate body are coaxially arranged so that the thickness of the center of the isolation cover plate can be larger than that of the edge of the isolation cover plate. According to the invention, the protruding structure is additionally arranged on the side, facing the inner side of the cavity, of the isolation cover plate of the inductively coupled plasma device, so that the electric field intensity distribution in the cavity of the inductively coupled plasma device is changed under the condition that devices such as an antenna of the inductively coupled plasma device are not changed, and the uniformity of the radial distribution of the plasma in the cavity is realized by adjusting the distribution of the magnetic field intensity.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an inductively coupled plasma device and a semiconductor thin film device. Background technique [0002] In the existing technology, in the process of generating plasma using an ICP (Inductive Coupled Plasma Emission Spectrometer, Inductively Coupled Plasma) device, several groups of antennas connected to a radio frequency (RF) power supply and an impedance matching network (impedance matching network) are generally used (antenna), through the isolation cover, a radio frequency magnetic field is generated in the vacuum chamber gas by electromagnetic induction, which in turn causes a circulating electron flow in the gas to generate plasma. The plasma thus generated is used to etch or deposit species on a substrate in a vacuum chamber. The magnetic flux caused by the design of the antenna structure presents an uneven distribution on the surface of the isolation...
Claims
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IPC IPC(8): H01J37/32H01L21/67
CPCH01J37/32458H01J37/321H01L21/67011H01J2237/332
Inventor 余先炜田才忠林保璋
Owner 盛吉盛(宁波)半导体科技有限公司