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Solar cell, preparation method thereof and photovoltaic module

A solar cell and polysilicon layer technology, applied in photovoltaic power generation, electrical components, circuits, etc., can solve the problems of poor passivation effect and short-circuit current reduction, and achieve the effects of reducing absorption, increasing short-circuit current, and improving passivation effect

Active Publication Date: 2022-02-11
ZHEJIANG JINKO SOLAR CO LTD +1
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Problems solved by technology

The current polysilicon doped layer on the back of the N-type TOPCon cell absorbs light severely, which makes the passivation effect poor and leads to a decrease in the short-circuit current

Method used

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  • Solar cell, preparation method thereof and photovoltaic module
  • Solar cell, preparation method thereof and photovoltaic module
  • Solar cell, preparation method thereof and photovoltaic module

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preparation example Construction

[0075] Based on this, the application provides a kind of preparation method of solar cell, such as figure 1 Shown, preparation method comprises the following steps:

[0076] Step S10, doping the front surface of the textured N-type semiconductor substrate to form a P-type emitter;

[0077] Step S20, forming a tunneling layer on the rear surface of the N-type semiconductor substrate;

[0078] Step S30, depositing and forming a first polysilicon layer, an N-type doped amorphous silicon layer and a second polysilicon layer on the surface of the tunneling layer, wherein the second polysilicon layer is located away from the the outermost layer of the tunneling layer;

[0079] Step S40, annealing, so that the doping elements in the N-type doped amorphous silicon layer diffuse to the first polysilicon layer and the second polysilicon layer, forming a composite N-type doped polysilicon layer , the doping concentration of each doped polysilicon layer in the composite N-type doped po...

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Abstract

The invention provides a solar cell and a preparation method thereof, and a photovoltaic module, and the method comprises the following steps: carrying out the doping of the front surface of a textured N-type semiconductor substrate, so as to form a P-type emitter; forming a tunneling layer on the rear surface of the semiconductor substrate; depositing and forming a first polycrystalline silicon layer, an N-type doped amorphous silicon layer and a second polycrystalline silicon layer on the surface of the tunneling layer; carrying out annealing treatment , so that doping elements in the N-type doped amorphous silicon layer are diffused to the first polycrystalline silicon layer and the second polycrystalline silicon layer, and a composite N-type doped polycrystalline silicon layer is formed; forming a first passivation layer on the surface of the P-type emitter; and forming a second passivation layer on the surface of the composite N-type doped polycrystalline silicon layer. According to the solar cell provided by the invention, the loss of parasitic optical absorption and free carrier absorption on the rear surface of the solar cell can be reduced, and the passivation performance is improved.

Description

technical field [0001] The present application relates to the field of photovoltaic technology, in particular, to a solar cell, a preparation method thereof, and a photovoltaic module. Background technique [0002] TOPCon (Tunnel Oxide Passivated Contact) batteries rely on the "tunneling effect" to achieve rear surface passivation. The rear surface structure of existing TOPCon batteries is a semiconductor substrate, a tunneling layer, and doped conductive materials from the inside to the outside. layer, rear surface passivation layer. The current polysilicon doped layer on the back of the N-type TOPCon cell absorbs light severely, which makes the passivation effect poor, resulting in a decrease in short-circuit current. Contents of the invention [0003] In view of this, the application proposes a solar cell and its preparation method, and a photovoltaic module. By forming a composite N-type doped polysilicon layer with different doping concentrations on the surface of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0376H01L31/0216H01L31/0475H01L31/0747
CPCH01L31/02161H01L31/0475H01L31/03762H01L31/0747Y02E10/548
Inventor 杨楠楠金井升张昕宇
Owner ZHEJIANG JINKO SOLAR CO LTD
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