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Ultrahigh voltage element

An ultra-high voltage and component technology, which is applied in the manufacture of electrical components, semiconductor devices, semiconductor/solid-state devices, etc., can solve problems such as uneven electric field distribution, improve uneven electric field distribution, reduce corner current crowding effect, and improve SOA Effect

Pending Publication Date: 2022-02-18
NUVOTON
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides an ultra-high voltage component, which can improve the problem of uneven electric field distribution, and does not require external high-voltage ESD protection components

Method used

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  • Ultrahigh voltage element
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Examples

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Embodiment Construction

[0040] The following examples are listed and described in detail with the accompanying drawings, but the provided examples are not intended to limit the scope of the present invention. In addition, the drawings are for illustrative purposes only and are not drawn to original scale. In order to facilitate understanding, the same components in the following description will be described with the same symbols.

[0041] Figure 1A It is a schematic top view of an ultra-high voltage component according to an embodiment of the present invention. Figure 1B Yes Figure 1A The cross-sectional schematic diagram of the I-I' line segment.

[0042] Please refer to Figure 1A and Figure 1B , the ultra high voltage device includes a substrate 100 , an interdigitated source 102 , an interdigitated drain 104 and a gate 106 . The interdigitated source 102 is disposed on the surface 100a of the substrate 100, the interdigitated source 102 includes a plurality of first interdigitated portion...

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PUM

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Abstract

The invention provides an ultrahigh voltage element. The ultrahigh voltage element comprises a substrate, an interdigital source electrode, an interdigital drain electrode and a grid electrode, and the interdigital source electrode is arranged on the surface of the substrate. The interdigital source electrode comprises a plurality of first interdigital parts and a peripheral part surrounding the first interdigital parts. The interdigital drain electrode is arranged on the surface of the substrate, and the interdigital drain electrode is a pattern which is in mirror symmetry and complementary with the interdigital source electrode. The grid electrode is arranged on the substrate between the interdigital source electrode and the interdigital drain electrode. The layout of the interdigital source electrode and the interdigital drain electrode enables the electric field distribution to be uniform and prevents the occurrence of a corner current crowding effect.

Description

technical field [0001] The present invention relates to an ultra-high voltage component technology, and in particular relates to an ultra-high voltage component (UHV device) which improves uneven electric field distribution. Background technique [0002] In recent years, ultra-high voltage components such as laterally diffused metal oxide semiconductor power transistors (LDMOS) have been widely developed and integrated for solar energy, LED drivers and motor drivers. Therefore, the development of electrostatic discharge protection (ESD protection) in ultra- Play a very important role in high voltage components. [0003] The electrostatic discharge (Electrostatic Discharge, ESD) test is to simulate the damage that external static electricity may cause to the IC, and discharge static electricity between the pin (PIN) of the IC and the PIN. At present, the ultra-high voltage lateral diffusion NMOS (UHV LDNMOS) architecture is connected to the PIN in IC applications. There are ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/417H01L29/06H01L21/336
CPCH01L29/78H01L29/41725H01L29/0615H01L29/0684H01L29/66477
Inventor 陈奕豪
Owner NUVOTON
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