31results about How to "Improve ESD capability" patented technology

The invention provides a trigger circuit structure with circuit power supply rail antistatic protection, belonging to the technical field of electronics. The structure is used for triggering an integrated circuit high voltage power supply rail antistatic protective device with mixed working voltage, and comprises a series circuit, a second PMOS (positive channel metal oxide semiconductor) tube and a resistor R, wherein the series circuit consists of m (a positive integer) first PMOS tubes and is formed by connection of diodes; the source electrode of the most top first PMOS tube in the series circuit is connected with VDD_H (voltage drain drain_high); the drain electrode of the second PMOS tube is connected with a triggering end T of an ESD (electro-static discharge) protective device; the grid electrode of the second PMOS tube is connected with VDD (voltage drain drain) through the resistor R. The trigger circuit structure consists of a low voltage device, however, the trigger circuit structure can tolerate VDD_H voltage of a high voltage power supply rail, reduce the trigger voltage of the device, promote uniform conduction of the device, and improve ESD capability, and meanwhile, no capacitor device exists in the circuit, thus, the leakage current of the protected integrated circuit under normal working is smaller.

The invention is an integrated circuit full-chip electro static discharge (ESD, Electro Static Discharge) protection method. According to an integrated circuit full-chip ESD structure of the method, one power-ground ESD discharge path is added in each signal IO unit, namely, a full chip not only contains an electro static discharge path 102 in a power IO unit, but also contains the electro static discharge path 101 in each signal IO unit. Therefore, the number of the electro static discharge paths in the full chip is increased, the electro static discharge path between IO is shortened, the discharge resistance between IO is reduced, the full-chip electro static discharge efficiency is improved, and the full-chip ESD level is upgraded.

A semiconductor power device integrated with clamp diodes is disclosed by offering dopant out-diffusion suppression layers to enhance the ESD protection between gate and source, and avalanche capability between drain and source.

The invention provides a semiconductor device comprising a substrate having a first region and second regions, the first region being located between two adjacent second regions; two sub drain regions located in the first region of the substrate; a dummy structure positioned on the substrate between the two adjacent sub drain regions; a source region located in the second region of the substrate; a gate structure positioned on the substrate between the first region and the second regions. The ESD capacity of the device is improved through the dummy structure, an SAB photomask in the prior art is not needed, a new technological process does not need to be introduced, and the dummy structure can be directly and synchronously formed in the manufacturing process, so that the manufacturing cost of the device is reduced.

The invention provides a flip semiconductor light-emitting element, a semiconductor light-emitting device and a display device. The semiconductor light-emitting element comprises a substrate and a light-emitting epitaxial layer formed on the substrate. When an electrode structure is formed above the light-emitting epitaxial layer, a first electrode layer partially covering the light-emitting epitaxial layer above the light-emitting epitaxial layer is omitted, so that the surface of the light-emitting epitaxial layer is relatively high in flatness. When an insulating reflection layer and an insulating protection layer are formed subsequently, the flatness of the insulating reflection layer and the insulating protection layer can be ensured. Moreover, the overall thickness of the insulating reflection layer and the insulating protection layer is not greater than 3 microns, so that abnormal protrusions cannot occur when the electrode through holes are formed in the insulating reflection layer and the insulating protection layer, the electrode through holes have good morphology, the adhesion of a subsequently formed electrode bonding pad in the electrode through hole and the adhesion of the subsequently formed electrode bonding pad above the insulating protection layer are enhanced, and the electrode bonding pad does not have defects such as cracks or fractures, so that the stability and reliability of the device are enhanced.

The invention discloses a logic conversion circuit device, which comprises a logic conversion circuit, wherein double-loop protection is adopted by a circuit port structure of the logic conversion circuit; an ESD input layer is added to an N-channel metal oxide semiconductor (NMOS) tube part of the circuit; a radiating pipe is coiled in a cabinet body; the logic conversion circuit is arranged in the cabinet body; a refrigerant outlet and a refrigerant outlet, which are communicated with the radiating pipe are formed in the cabinet body; in addition, the cabinet body comprises a front cover board and front cover board accessories; and the front cover board can be pivoted on the cabinet body between the direction in which the cabinet body is uncovered and the direction in which the cabinet body is covered. According to the structure, the ESD capacity of a circuit port is improved; a protective diode is added between a power supply circuit and the ground; the ESD capacity of the circuit is also improved; and the defect that the front cover board frequently warps in the device of covering the front cover board in the prior art is avoided.

The invention belongs to the technical field of semiconductor protection devices, and relates to a low-clamping protection device structure and a manufacturing method thereof. A first conduction typeisolation structure which divides a device into three regions is arranged in a second conduction type epitaxial layer; a low-capacitance diode D1 is formed in the first region; a low-capacitance diodeD2 is formed in the second region; a discharge tube TSS is formed in the third region; a TVS voltage-stabilizing diode Z1 is formed in the first conduction type isolation structure; the TVS voltage-stabilizing diode Z1 is connected in parallel with the discharge tube TSS, and is connected with the diode D2 in series; the positive electrode of the diode D2 is connected with the negative electrodeof the TVS voltage-stabilizing diode Z1, and is connected with an I/O port; and the positive electrode of the diode Z1 is connected with the positive electrode of the diode D1 are grounded. By addingthe discharge tube TSS structure, on the basis of not enlarging the device area and increasing the process cost, a clamping voltage is reduced, and the current capacity is improved, so that the ESD capacity of a high-speed data transmission channel port is improved, the data integrity is guaranteed, and meanwhile burnout caused by excessively high dissipation power is prevented.

A vertical electrostatic discharge protection device includes a heavily-doped semiconductor substrate, a first semiconductor epitaxial layer, a first doped buried layer, a second semiconductor epitaxial layer, a first doped well, at least one second doped well, and a first heavily-doped area. The epitaxial layers are stacked on the substrate. The first doped buried layer is formed in the first semiconductor epitaxial layer. The first doped well is formed in the second semiconductor epitaxial layer. The first doped well is formed on the first doped buried layer, and the doping concentration of the first doped well is lower than that of the first doped buried layer. The second doped well is formed in the second semiconductor epitaxial layer. The second doped well is adjacent to the first doped well.

A layout design method for improving the ESD protection capability of an interdigital structure type device is characterized in that on the basis of a traditional interdigital type ESD protection device, the length of a drain region interdigital is increased at the center of an interdigital structure, and according to the fact that the total length of a gate structure and a source structure is not changed, the farther the distance from the center of the interdigital structure is, the farther the distance from the center of the interdigital structure is; and designing the interdigital length of the drain region according to the principle that the interdigital length of the drain region is smaller. Finally, under the condition that the total length of the gate and source structures is not changed and the area is the same, the ESD capability is higher; when the ESD capacity is the same, the area is smaller; the influence of current heterogeneity during ESD protection of the interdigital structure type device is relieved, compared with a traditional interdigital structure device, the MOS device using the method is better in ESD protection capacity, higher in current discharge capacity and higher in reliability, layout modification only needs to be conducted on a chip, and the manufacturing cost is reduced. The performance of the interdigital structure can be improved without influencing the basic parameters of the device, and the ESD protection capability, the reliability and the electrostatic discharge capability of the interdigital structure type device are improved.

The invention discloses a logic conversion circuit device with a cooling effect. A circuit port structure of a logic conversion circuit employs double-ring protection, and an NMOS tube part of the circuit is additionally provided with an ESM input layer. A bulged tail end forms a profile from the head to the tail from the low to the high, wherein the profile has slope. A left vertical-type sheet body is provided with a left hole which is disposed in the lateral direction of the left vertical-type sheet body and passes through the left vertical-type sheet body. A right vertical-type sheet body is provided with a right hole which is disposed in the lateral direction of the right vertical-type sheet body and passes through the right vertical-type sheet body. The above structure improves the ESD capability of a circuit port. Moreover, a protection diode is additionally disposed between the circuit and a power supply, thereby also improving the ESD capability of the circuit, and ironing out the defects in the prior art that a front cover plate is inclined when the front cover plate of the device is closed and the flexibility is poor.

The invention discloses an RS485 driver of a low bit error rate, a low working power supply voltage and high ESD, and relates to integrated-circuit technology. The driver includes two power tube circuits. Each power tube circuit includes a front-stage driving unit, a power tube unit and a feedback detection unit. The driver is characterized in that power tube substrates in the power tube unit are floating, and the front-stage driving unit adopts constant-current source front-stage driving. The driver has the advantages that the working power supply voltage is low, costs are low, the bit error rate is low, ESD performance is high, the bit error rate of RS485 transmission can be effectively decreased, and ESD capability of power tubes can be improved.

The application of the invention is divisional application of 201210559280.0 and discloses a manufacturing method for a power semiconductor device with electro-static discharging capability. The manufacturing method comprises the following steps: the power semiconductor with a first end, a second end and a third end is provided; the power semiconductor device is formed by arranging a cellular array; one port or multiple port of the three ports is connected with a resistor respectively to form the power semiconductor device with the electro-static discharging capability; the invention further provides the power semiconductor device with the electro-static discharging capability. According to the power semiconductor device, as the resistors connected in series with one port or multiple port of the three ports serve as ESD(Electro-Static discharge)protective components to improve the ESD capability, the capacity of the resistors connected with one port or multiple port of the three ports in series can meet the demands of the ESD in various grades through slightly adjusting a protected device layout structure and the flexibility of the design is high.

A semiconductor device and a preparation method thereof relate to the technical field of semiconductors. The device comprises a depletion type HEMT device body and an ESD protection structure, the ESD protection structure comprises a diode group connected between a grid electrode of the depletion type HEMT device body and a source electrode of the depletion type HEMT device body, and the diode group comprises a Schottky diode which is conducted from the source electrode of the depletion type HEMT device body to the grid electrode direction of the depletion type HEMT device body; the ESD protection structure is located below a grid electrode bonding pad of the depletion mode HEMT device body; and/or, the ESD protection structure is located below the source electrode thickening metal of the depletion mode HEMT device body, and the orthographic projection of the ESD protection structure on the substrate of the depletion mode HEMT device body and the orthographic projection of the active region of the depletion mode HEMT device body on the substrate are not overlapped. According to the device, the ESD protection level can be improved on the premise that the effective chip area of the device is not occupied.

The invention discloses a full-chip electrostatic discharge network, which comprises a power clamp circuit and a plurality of IO units. The power clamp circuit is connected between the power supply and the ground. The power clamp circuit also comprises an ESD detection circuit, which is used for detecting the ESD signal and generating a trigger signal after detecting the ESD signal. The pluralityof IO units are a plurality of IO units connected in parallel and connected between the power supply and the ground as well as the power clamp circuit. Each unit of the IO units has an IO port, and the IO port is an IO port which will be affected by the electrostatic discharge. The IO unit comprises a precursor circuit, a control circuit and a back drive circuit, wherein the control circuit and the back drive circuit are connected with a power supply and a ground; All the precursor circuits of the IO unit are connected to the ESD trigger signal terminal of the ESD detection circuit to receivethe ESD trigger signal, and then the output terminal of the precursor circuit generates a corresponding control signal to be provided to the control circuit.

The invention relates to an electrostatic discharge protection device which comprises a first GGNMOS device and a second GGNMOS device which are adjacent to each other, and each of the first GGNMOS device and the second GGNMOS device comprises a well region; a first conductive type doped region which is arranged in the well region and comprises a drain region and a source region; and agrid electrode which is arranged above the area between the drain electrode area and the source electrode area; each of the first GGNMOS device and the second GGNMOS device comprises a plurality of GGNMOS transistors, and each GGNMOS transistor comprises a grid electrode, a source electrode region on one side of the grid electrode and a drain electrode region on the other side of the grid electrode; the GGNMOS transistor closest to the two GGNMOS devices is the GGNMOS transistor with the largest DCG, and the DCG is the distance from a drain electrode contact hole of the GGNMOS transistor to a grid electrode of the GGNMOS transistor. According to the invention, the DCG of the nearest GGNMOS transistor is enlarged, better ESD protection capability can be provided for the extreme condition, and the ESD performance between the input port and the output port is optimized. The area utilization rate of the wafer is higher, and the manufacturing cost is reduced.

The invention provides an ultrahigh voltage element. The ultrahigh voltage element comprises a substrate, an interdigital source electrode, an interdigital drain electrode and a grid electrode, and the interdigital source electrode is arranged on the surface of the substrate. The interdigital source electrode comprises a plurality of first interdigital parts and a peripheral part surrounding the first interdigital parts. The interdigital drain electrode is arranged on the surface of the substrate, and the interdigital drain electrode is a pattern which is in mirror symmetry and complementary with the interdigital source electrode. The grid electrode is arranged on the substrate between the interdigital source electrode and the interdigital drain electrode. The layout of the interdigital source electrode and the interdigital drain electrode enables the electric field distribution to be uniform and prevents the occurrence of a corner current crowding effect.

The invention relates to an enhanced logic conversion circuit device. A circuit port structure of a logic conversion circuit is in double-loop protection; simultaneously, an ESD (Electronic Static Discharge) input layer is additionally arranged at an NMOS (N-channel Metal Oxide Semiconductor) tube part of the circuit; a particle impurity channel is formed between a first hollow cover body and a second hollow cover body; a clean airflow channel is formed between a reverse osmosis membrane of the first hollow cover body and an air outlet; and the head face of the reverse osmosis membrane is an arched surface or a reduced surface capable of separating particle impurities from the reverse osmosis membrane under driving of external force. By means of such a structure, the disadvantages that bad effects are brought about to performances of the logic conversion circuit due to the fact that impurity particles are often attached in the logic conversion circuit, and the removing difficulty of the current impurity particle removing device is often high while removing the impurity particles in the prior art can be avoided; the ESD capability of the circuit port is also increased; and the ESD capability of the circuit is also increased by additionally arranging a protective diode between the circuit and a power ground.